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Thermopile infrared sensor and manufacturing method thereof

An infrared sensor and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, electrical radiation detectors, etc., can solve the problems of large volume, long reliability, long process steps, etc., so as to shorten the process steps and avoid the Temperature error, the effect of improving reliability

Pending Publication Date: 2021-04-09
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the thermopile infrared sensor produced at present, the thermopile chip and thermistor are formed separately, and the sub-package bases are installed separately, the process steps are long, and the volume is large, and they are all electrically connected by external wires so that the reliability is long

Method used

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  • Thermopile infrared sensor and manufacturing method thereof
  • Thermopile infrared sensor and manufacturing method thereof
  • Thermopile infrared sensor and manufacturing method thereof

Examples

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Comparison scheme
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Embodiment 1

[0034] Embodiment 1 provides a thermopile infrared sensor, figure 1 For a schematic cross-sectional structure diagram of a thermopile infrared sensor provided in Embodiment 1 of the present invention, please refer to figure 1 , the thermopile infrared sensor consists of:

[0035] A carrier substrate 1 provided with a film thermistor 2, the carrier substrate 1 includes opposite first surfaces 11 and second surfaces 12;

[0036] The thermopile structure 3, the thermopile structure 3 includes a first substrate 31 provided with a first cavity 311 and a thermopile body 32 disposed on the first substrate 31, the thermopile body 32 is composed of at least one set of thermocouple pairs , the first substrate 31 is disposed on the first surface 11 of the carrier substrate 1 .

[0037] In this embodiment, the thermistor 2 can be located on the first surface 11 , the second surface 12 of the carrier substrate 1 or in the carrier substrate 1 , so as to be formed in the same packaging str...

Embodiment 2

[0055] Embodiment 2 provides a kind of manufacturing method of thermopile infrared sensor, and the manufacturing method of thermopile infrared sensor comprises:

[0056] S01: Provide a carrier substrate, the carrier substrate includes opposite first surfaces and second surfaces;

[0057] S02: forming a thermistor in the carrier substrate, on the first surface of the carrier substrate, or on the second surface of the carrier substrate;

[0058] S03: Form a thermopile structure, and bond the thermopile structure to the first surface of the carrier substrate. The thermopile structure includes a first substrate formed on the first surface of the carrier substrate, and a thermoelectric cell formed on the first substrate. In the stack body, a first cavity penetrating through the first substrate is formed on the first substrate, the thermopile body is composed of at least one set of thermocouple pairs, and the thermopile body covers the first cavity.

[0059] Step SON does not repre...

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PUM

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Abstract

The invention relates to a thermopile infrared sensor and a manufacturing method thereof, and the thermopile infrared sensor comprises a bearing substrate provided with a film-shaped thermistor, wherein the bearing substrate comprises a first surface and a second surface which are opposite to each other; and a thermopile structure which comprises a first substrate provided with a first cavity and a thermopile main body arranged on the first substrate, the thermopile main body is composed of at least one group of thermocouple pairs, and the first substrate is arranged on the first surface of the bearing substrate. According to the invention, the thermistor is arranged on the bearing substrate, so that the thermopile structure and the thermistor can be formed in the same packaging structure at the same time, integrated packaging is realized, the process steps are shortened, the size of the infrared thermopile sensor is reduced, and the reliability of the infrared thermopile sensor is improved.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a thermopile infrared sensor and a manufacturing method thereof. Background technique [0002] With the development of the Internet of Things technology and the improvement of people's quality of life, the application prospects of infrared detectors are becoming more and more extensive. Among them, the thermopile infrared sensor is one of the earliest researched and practical infrared imaging devices. Infrared detectors, because of their small size, light weight, no need for refrigeration, and high sensitivity, are widely used in security monitoring, medical treatment, life detection, and consumer products, and their development is also more rapid. [0003] The working principle of the thermopile is mainly based on the Seebeck effect, that is, through two different materials or two objects with the same material but different work functions connected in series, w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/12G01J5/14G01J5/20G01J5/02H01L21/50H01L25/16
CPCG01J5/0215G01J5/12G01J5/14G01J5/20H01L21/50H01L25/16
Inventor 韩凤芹
Owner NINGBO SEMICON INT CORP