Vapor-phase growth device
A vapor phase growth, gas chamber technology, applied in crystal growth, single crystal growth, electrical components, etc., can solve the problems of unstable supply and reduced film reproducibility, and achieve the effect of improving reproducibility
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no. 1 approach
[0030] The vapor phase growth apparatus according to the first embodiment includes: a reaction chamber; a first gas chamber provided above the reaction chamber, into which the first process gas is introduced; and a plurality of first gas flow paths, which are supplied from the first gas chamber to the reaction chamber The first process gas, at least one of the first gas flow channels in the plurality of first gas flow channels has a first area and a second area between the first area and the reaction chamber, the first area has the same gas as the first process gas The first opening cross-sectional area in the plane perpendicular to the flow direction and the first length in the direction, the second region has the second opening cross-sectional area in the plane perpendicular to the direction and the second length in the direction, the second The cross-sectional area of the first opening is smaller than the cross-sectional area of the second opening, and the first length i...
no. 2 approach
[0097] The vapor phase growth apparatus of the second embodiment differs from the vapor phase growth apparatus of the first embodiment in that the first region is formed of a member separable from the second region. Hereinafter, some descriptions of the contents overlapping with those of the first embodiment are omitted.
[0098] Figure 8 It is a schematic sectional view of the first gas channel of the second embodiment. The first gas channel 51 has an upper region 51a and a lower region 51b. The first gas channel 51 includes a member 51x.
[0099] The part 51x forms at least a part of the upper region 51a. The member 51x is configured to be separable from the lower region 51b.
[0100] By forming the upper region 51a with the member 51x that can be separated from the lower region 51b, adjustment of the first opening cross-sectional area S1 and the first length L1 becomes easy. Therefore, it is easy to improve the reproducibility of the characteristics of the film.
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no. 3 approach
[0103] The vapor phase growth apparatus of the third embodiment differs from the vapor phase growth apparatus of the first embodiment in that there is one gas chamber. Hereinafter, some descriptions of the contents overlapping with those of the first embodiment are omitted.
[0104] Figure 9 is a schematic cross-sectional view of a vapor phase growth apparatus according to a third embodiment. The vapor phase growth apparatus 300 of the third embodiment is, for example, a monolithic epitaxial growth apparatus for epitaxially growing a single-crystal SiC film on a single-crystal SiC substrate.
[0105] The vapor phase growth apparatus 300 of the third embodiment includes a reaction chamber 10, a gas chamber 15 (first gas chamber), a plurality of gas channels 55 (first gas channels), a first gas supply port 81, and a second gas supply port. 82. The reaction chamber 10 includes a base 14 (holder), a rotary body 16, a rotary shaft 18, a rotary drive mechanism 20, a first heater...
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