Stacked crimping type power module and manufacturing method thereof

A technology of power modules and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as large stray inductance, low blocking voltage of power chips, and poor heat dissipation efficiency, so as to improve heat dissipation ability, increase the withstand voltage value, and improve the effect of heat dissipation

Active Publication Date: 2021-04-13
SHENZHEN INST OF WIDE BANDGAP SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the deficiencies of the prior art and avoid the technical problems of low blocking voltage of the power chip, large stray inductance, and poor heat dissipation efficiency, the present invention proposes:

Method used

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  • Stacked crimping type power module and manufacturing method thereof
  • Stacked crimping type power module and manufacturing method thereof
  • Stacked crimping type power module and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] This embodiment provides a stacked crimping power module and its manufacturing method, such as Figure 1-8 shown.

[0041] Stacked press-fit power modules such as figure 1 As shown, there are at least two layers of stacked prefabricated parts, and the prefabricated parts are connected by crimping.

[0042] The prefabricated part includes a first metal base plate, and at least one boss for placing chips is engraved on the first metal base plate, and at least one gap area between the bosses; the gap between the bosses of the first metal At least one first metal strip is arranged in the area, and the metal strip is used for positioning grid pogo pins; a plurality of channels are arranged in the first metal floor, and the channels are used for transmitting liquid or gas materials for cooling.

[0043] The metal strip includes two and clamped up and down and the middle one; the metal strip is provided with at least one spring thimble, and the spring thimble penetrates the ...

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Abstract

A stacked crimping type power module comprises at least two layers of prefabricated members arranged in a stacked manner, and the prefabricated members are connected through crimping; the prefabricated part comprises a first metal bottom plate, and at least one boss used for placing a chip and at least one gap area located between the bosses are carved on the first metal bottom plate; and an insulating shell higher than the boss is arranged outside the boss, and an upper molybdenum sheet, a power chip or an FRD chip and a lower molybdenum sheet are arranged on the upper portion of the boss wrapped by the insulating shell. The technical problems of low blocking voltage, large stray inductance and poor heat dissipation efficiency of an existing power device are solved, the safety working area of the power device is increased, the current sharing performance among the elastic elements is improved, the voltage withstanding value of the device is effectively improved, the stray inductance is effectively reduced, and the heat dissipation performance and the stress uniformity degree of a chip are improved.

Description

technical field [0001] Semiconductor field, specifically related to the preparation of power electronic devices Background technique [0002] Inside the traditional soldered IGBT, the stray parameters of the line are relatively large, and a large voltage spike will be generated during the turn-off process accompanied by certain electromagnetic interference. When the power system puts forward higher requirements on the power level and requires more chips to be connected in parallel, the parasitic parameters and differences of the chip gate, emitter, and collector will be further increased, which will aggravate the voltage overshoot and increase the Switching losses, and lead to large current imbalance, thereby reducing the reliability of the device. Compared with the soldered IGBT, the crimped IGBT has the advantages of high voltage, high current, low stray inductance, fast switching speed, and double-sided heat dissipation. Therefore, the crimped IGBT has become the mainstr...

Claims

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Application Information

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IPC IPC(8): H01L25/07H01L23/10H01L23/473H01L21/52
CPCH01L25/071H01L23/10H01L23/473H01L21/52H01L25/07
Inventor 敖日格力刘洋叶怀宇刘旭
Owner SHENZHEN INST OF WIDE BANDGAP SEMICON
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