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GaN-based HEMT gold-free ohmic contact electrode based on Ti/Ti-Al/Cu-W and preparation method of GaN-based HEMT gold-free ohmic contact electrode

An ohmic contact electrode and electrode technology, which is used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of reducing annealing alloy temperature and poor electrode surface morphology, and achieves lower annealing alloy temperature, high conductivity, high electrical conductivity, etc. The effect of high thermal conductivity

Pending Publication Date: 2021-04-16
ZHONGSHAN INST OF MODERN IND TECH SOUTH CHINA UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with the traditional ohmic contact electrode metal system, the present invention uses Ti-Al alloy instead of metal Al as the covering layer, which can reduce the temperature of the annealed alloy and effectively solve the problem of poor surface morphology of the electrode under high temperature annealing

Method used

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  • GaN-based HEMT gold-free ohmic contact electrode based on Ti/Ti-Al/Cu-W and preparation method of GaN-based HEMT gold-free ohmic contact electrode
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  • GaN-based HEMT gold-free ohmic contact electrode based on Ti/Ti-Al/Cu-W and preparation method of GaN-based HEMT gold-free ohmic contact electrode

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Embodiment 1

[0035] This embodiment provides a GaN-based HEMT based on Ti / Ti-Al / Cu-W without gold ohmic contact electrodes, such as image 3As shown, the electrodes are the first metal layer Ti2, the second metal layer Ti-Al alloy 3 and the third metal layer Cu-W alloy arranged in sequence from bottom to top on both sides of the upper surface of the GaN-based HEMT epitaxial layer 1 4. The thickness of the first metal layer Ti is 1 nm, the thickness of the second metal layer Ti—Al alloy is 50 nm, and the thickness of the third metal layer Cu—W alloy is 40 nm.

[0036] The second metal layer Ti-Al alloy is prepared by magnetron sputtering single target deposition or double target co-sputtering deposition. When using magnetron sputtering single target deposition, the target material used is Ti-Al mosaic target or Ti-Al alloy The target is a Ti target and an Al target when magnetron sputtering double-target co-sputtering is used for deposition. The mosaic target means that the target materia...

Embodiment 2

[0047] This embodiment provides a GaN-based HEMT based on Ti / Ti-Al / Cu-W without gold ohmic contact electrodes, such as image 3 As shown, the electrodes are the first metal layer Ti2, the second metal layer Ti-Al alloy 3 and the third metal layer Cu-W alloy arranged in sequence from bottom to top on both sides of the upper surface of the GaN-based HEMT epitaxial layer 1 4. The thickness of the first metal layer Ti is 5 nm, the thickness of the second metal layer Ti—Al alloy is 150 nm, and the thickness of the third metal layer Cu—W alloy is 60 nm.

[0048] This embodiment also provides a method for preparing a Ti / Ti-Al / Cu-W-based GaN-based HEMT gold-free ohmic contact electrode, comprising the following steps:

[0049] (1) Utilize photolithography technology to photolithographically define the source-drain ohmic contact electrode pattern 5 on the GaN-based HEMT epitaxial layer 1, such as figure 1 shown;

[0050] (2) Clean the source-drain ohmic contact electrode pattern are...

Embodiment 3

[0057] This embodiment provides a GaN-based HEMT based on Ti / Ti-Al / Cu-W without gold ohmic contact electrodes, such as image 3 As shown, the electrodes are the first metal layer Ti2, the second metal layer Ti-Al alloy 3 and the third metal layer Cu-W alloy arranged in sequence from bottom to top on both sides of the upper surface of the GaN-based HEMT epitaxial layer 1 4. The thickness of the first metal layer Ti is 10 nm, the thickness of the second metal layer Ti-Al alloy is 200 nm, and the thickness of the third metal layer Cu-W alloy is 80 nm.

[0058] This embodiment also provides a method for preparing a Ti / Ti-Al / Cu-W-based GaN-based HEMT gold-free ohmic contact electrode, comprising the following steps:

[0059] (1) Utilize photolithography technology to photolithographically define the source-drain ohmic contact electrode pattern 5 on the GaN-based HEMT epitaxial layer 1, such as figure 1 shown;

[0060] (2) Clean the source-drain ohmic contact electrode pattern ar...

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Abstract

The invention discloses a GaN-based HEMT gold-free ohmic contact electrode based on Ti / Ti-Al / Cu-W. The GaN-based HEMT gold-free ohmic contact electrode is formed by sequentially arranging a first metal layer Ti, a second metal layer Ti-Al alloy and a third metal layer Cu-W alloy on the upper surface of a GaN-based HEMT epitaxial layer from bottom to top. The invention further provides a preparation method of the electrode. The electrode is formed by sequentially arranging the first metal layer Ti, the second metal layer Ti-Al alloy and the third metal layer Cu-W alloy on the two sides of the upper surface of the GaN-based HEMT epitaxial layer from bottom to top. The Ti-Al alloy is adopted to replace metal Al to serve as a covering layer, and the Cu-W alloy is adopted to replace metal Au to serve as a cap layer. Compared with a traditional ohmic contact electrode metal system, the ohmic contact electrode is beneficial to reducing alloy temperature, improving the conductivity of the electrode, reducing process difficulty and lowering the manufacturing cost of a GaN-based HEMT device.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a Ti / Ti-Al / Cu-W-based GaN-based HEMT gold-free ohmic contact electrode and a preparation method thereof. Background technique [0002] GaN-based high electron mobility transistors (HEMTs) have broad application prospects in the fields of high-voltage, high-frequency, high-power semiconductor laser devices and high-performance ultraviolet detectors. However, the production line technology for compound semiconductors is relatively backward, and the cost of process update and operation and maintenance is relatively high, which increases the production cost of GaN-based HEMT devices. Using mature and advanced Si-CMOS process lines to produce HEMT devices can effectively reduce the difficulty of manufacturing HEMT devices and reduce manufacturing costs. The heavy metal Au used in the ohmic and Schottky contact processes of conventional HEMT devices will form deep-level impurities in Si and p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/45H01L21/285H01L21/28H01L29/778
Inventor 王洪李先辉谢子敬
Owner ZHONGSHAN INST OF MODERN IND TECH SOUTH CHINA UNIV OF TECH