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Semiconductor structure and forming method thereof

A semiconductor and gas technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that the performance of semiconductor structures needs to be improved, and achieve the effect of improving dimensional accuracy and performance.

Pending Publication Date: 2021-04-27
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the performance of existing semiconductor structures that use self-assembled patterning materials as patterns needs to be improved

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0032] As mentioned in the background art, the performance of existing semiconductor structures formed using self-organized materials as patterns needs to be improved. Now analyze and illustrate in conjunction with specific embodiment.

[0033] Figure 1 to Figure 3 It is a schematic cross-sectional structure diagram of the formation process of the semiconductor structure in an embodiment.

[0034] Please refer to figure 1 , providing a substrate 100, the substrate 100 has an orientation layer 101 on it, the orientation layer 101 has a first sacrificial material layer 102 on it, and the first sacrificial material layer 102 has a patterned layer 103 on it.

[0035] Please refer to figure 2 , using the patterned layer 103 as a mask to etch the first sacrificial material layer 102, forming a first sacrificial layer 104 on the guiding layer 101; forming a second sacrificial layer 105 on the guiding layer 101, The second sacrificial layer 105 exposes the top surface of the fir...

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Abstract

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the following steps of providing a to-be-etched layer, forming a precursor layer on the to-be-etched layer, annealing the precursor layer to enable the precursor layer to form a plurality of initial first mask layers and second mask layers which are separated from one another, and enabling the second mask layers to be located between the adjacent initial first mask layers, modifying the initial first mask layer to form a first mask layer, and etching to remove the second mask layer, wherein the etching rate of the process for etching to remove the second mask layer on the first mask layer material is smaller than the etching rate of the process for etching to remove the second mask layer on the initial first mask layer material. And the performance of the formed semiconductor structure is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the increasing demand for high-capacity semiconductor storage devices, the integration density of semiconductor storage devices has attracted people's attention. In order to increase the integration density of semiconductor storage devices, many different methods have been used in the prior art. Self-aligned multiple patterns Technology is a solution that is widely accepted and applied in the fabrication of semiconductor devices. [0003] With the further reduction of semiconductor technology nodes, in order to meet the requirements of smaller-sized patterns, the prior art introduces self-assembled patterned materials as pattern-forming materials. Self-assembled patterned materials usually include two or more mutually insoluble different polymer block components. Under appropria...

Claims

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Application Information

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IPC IPC(8): H01L21/308H01L21/3065
CPCH01L21/3081H01L21/3083H01L21/3065
Inventor 时贺光
Owner SEMICON MFG INT (SHANGHAI) CORP
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