Hard mask composition, hard mask layer, and method of forming pattern

A technology of composition and hard mask, which is applied in the photolithographic process of patterned surface, photosensitive materials used in optomechanical equipment, instruments, etc., and can solve the problems such as difficulty in providing fine patterns

Pending Publication Date: 2021-04-30
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Today, depending on the small size of the pattern to be formed, it is difficult to provide fine patterns with excellent contours only by the above-mentioned typical photolithography techniques

Method used

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  • Hard mask composition, hard mask layer, and method of forming pattern
  • Hard mask composition, hard mask layer, and method of forming pattern
  • Hard mask composition, hard mask layer, and method of forming pattern

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0136] 1-Hydroxypyrene (21.8 g, 0.1 mol) and 3,4-dihydroxybenzaldehyde (13.8 g, 0.1 mol) were added to a 250-mL flask, and then, to it was added A solution prepared by dissolving p-toluenesulfonic acid monohydrate (0.57 g, 0.03 mmol) in propylene glycol monomethyl ether acetate (PGMEA). The obtained mixture was stirred at 90° C. to perform a polymerization reaction, and when the weight average molecular weight reached 2,000 to 2,500, the reaction was completed. When the polymerization reaction was completed, the reactant was cooled to room temperature, and then, 300 g of distilled water and 300 g of methanol were added thereto, and then vigorously stirred and allowed to stand. After removing the supernatant therefrom, the precipitate therein was dissolved in 100 g of PGMEA, 300 g of methanol and 300 g of distilled water were added thereto, and then vigorously stirred and allowed to stand (primary process). After removing the supernatant again, the precipitate therein was diss...

Synthetic example 2

[0140] Except using 4-hydroxyl-3-methoxybenzaldehyde (15.2 grams, 0.1 mole) instead of 3,4-dihydroxybenzaldehyde (13.8 grams, 0.1 mole), according to the same method as Synthetic Example 1, the compound containing A polymer of a structural unit (repeating unit) represented by Chemical Formula 1b. (Mw: 2,785)

[0141] [chemical formula 1b]

[0142]

Synthetic example 3

[0144] Except using 2,4,6-trihydroxybenzaldehyde (15.4 grams, 0.1 mole) instead of 3,4-dihydroxybenzaldehyde (13.8 grams, 0.1 mole), according to the same method as Synthetic Example 1, the compound containing A polymer of structural units (repeating units) represented by 1c. (Mw: 2,127)

[0145] [chemical formula 1c]

[0146]

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PUM

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Abstract

The present invention provides a hard mask composition, a hard mask layer, and a method of forming a pattern, the hard mask composition comprising a polymer and a solvent, the polymer comprising a structural unit represented by Chemical Formula 1. In Chemical Formula 1, the definitions of A, B, and R1 to R5 are as described in the specification. The hard mask composition is capable of improving etching resistance and film density. [Chemical Formula 1].

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit from Korean Patent Application No. 10-2019-0127125 filed with the Korean Intellectual Property Office on October 14, 2019, the entire contents of which are incorporated herein by reference. technical field [0003] A hard mask composition, a hard mask layer including a cured product of the hard mask composition, and a method of forming a pattern using the hard mask composition are disclosed. Background technique [0004] Recently, the semiconductor industry has advanced to ultra-fine technology with patterns in the size of several nanometers to tens of nanometers. Such ultra-fine techniques mainly require efficient photolithography. [0005] Typical photolithography techniques include: providing a material layer on a semiconductor substrate; coating a photoresist layer on the material layer; exposing and developing the photoresist layer to provide a photoresist pattern; Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/09C08G8/04
CPCG03F7/09C08G8/04G03F7/094C08L61/00C08L25/08G03F7/11G03F7/20G03F7/162G03F7/0041G03F7/202
Inventor 金昇炫郑铉日金尙美金铃根朴相喆
Owner SAMSUNG SDI CO LTD
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