A kind of multi-structure chemical mechanical polishing pad, manufacturing method and application thereof

Abstract

The invention discloses a multi-structure chemical mechanical polishing pad, a manufacturing method and application thereof, comprising: a main structure, a surface-modified secondary structure, a protection structure and a surface-modified secondary structure An upper connector to which the structures are bonded, and a lower connector to which the surface-modified secondary structure and the protective structure are bonded. The surface-modified secondary structure of the present invention has excellent mechanical properties such as elongation at break, tensile strength, etc., its thickness is also more uniform, and the bonding and peeling strength with the connecting body is more excellent, so that the surface The combined performance of chemical mechanical polishing pads made from the modified secondary structures is better.

Description

technical field [0001] The present invention relates to the technical field of chemical mechanical planarization (CMP), in particular to a composite multi-structure polishing pad for polishing and planarizing at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, a manufacturing method and the same. application. Background technique [0002] In the manufacturing process of large-scale integrated circuits and other precision electronic devices, as the size of semiconductor substrates such as silicon wafers increases, the integration scale increases, the width of metal lines enters the nanometer scale, and the number of wiring layers increases, the substrate of semiconductor materials is affected. The requirements for planarization and the planarization of wiring surfaces of various layers are gradually increasing. Chemical mechanical planarization (CMP) removes unwanted surface shapes and surface defects such as rough surfaces, coalesced ma...

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Problems solved by technology

[0005] However, the method described in this patent has major defects

Specifically, the reduction of the thickness of the adhesive layer leads to the low bonding strength between the double-sided tape and the buffer layer structure and the bonding strength with the polishing disc. In the case of penetration and the presence of upper pressure and high-speed shear force, it will cause serious problems such as delamination and separation on the bonding surface of the traditional multi-structure polishing pad bonding layer

In actual production, there will be very huge losses

[0006] In view of the above-mentioned bonding surface of the traditional multi-structure polishing pad bonding layer, it is prone to serious problems such as delamination and separation when it is exposed to strong acid or strong alkaline polishing solution for a long time and under the conditions of high speed and pressure.

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