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Temperature compensation circuit of silicon pressure sensor

A temperature compensation circuit and sensor technology, which is applied in the measurement of the property force of piezoelectric resistance materials, the measurement of fluid pressure, and the measurement of fluid pressure through electromagnetic components, etc., to achieve easy, high-order harmonic elimination, high compensation accuracy Effect

Active Publication Date: 2021-05-07
WUHAN MARINE ELECTRIC PROPULSION RES INST CHINA SHIPBUILDING IND CORP NO 712 INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the technical problems existing in the existing pressure sensor using diode bias for temperature compensation, the present invention proposes a temperature compensation circuit for silicon pressure sensor

Method used

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  • Temperature compensation circuit of silicon pressure sensor
  • Temperature compensation circuit of silicon pressure sensor
  • Temperature compensation circuit of silicon pressure sensor

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Embodiment 1

[0020] figure 2 As shown, the embodiment of the present invention provides a temperature compensation circuit for a silicon pressure sensor, in which the semiconductor strain resistance bridge H1 and the semiconductor strain resistance bridge M2 are according to figure 2 The way shown is placed on the elastic base 6 in the same direction, and the elastic base 6 is fixed by the fixed support structure 7 . Bridge 1 consists of four semiconductor strain relief resistors R tH 8 connections, the bridge 2 consists of four semiconductor strain resistors R tM 9 connections constitute.

[0021] The input terminals of bridge 1 and bridge 2 are connected to voltage source and ground, and the voltage source voltage is U in . After the elastic substrate 6 is subjected to external pressure, the semiconductor strain resistance 8 and the semiconductor strain resistance 9 generate strain ε. The strain resistance 8 and the strain resistance 9 are externally led through the lead terminal ...

Embodiment 2

[0025] The pressure sensor has two bridges H and M composed of four semiconductor strain relief connections on the silicon substrate. The input terminal of the bridge H is connected to the voltage source U in , so the bridge output voltage where ΔR tH is the change in resistance value of the bridge H strain resistance under external pressure, R tH is the resistance value of the bridge H strain resistance at temperature T. If the sensitivity coefficient of the bridge H strain resistance at temperature T is K tH , the strain generated under the external pressure is ε, then Therefore, the output voltage U of bridge H at temperature T outH =K tH εU in . Bridge H strain resistance has a negative temperature coefficient β H , sensitivity K tH =K OH (1+β H T), where K OH is the bridge H strain resistance sensitivity at the reference temperature. Therefore, the bridge H output voltage U outH =K OH (1+β H T)εU in =K OH εU in +K OH beta H TεU in , where K OH ...

Embodiment 3

[0031] The pressure sensor designed according to the temperature compensation circuit of the silicon pressure sensor provided by the embodiment of the present invention has lower sensitivity drift error than the silicon pressure sensor using diode bias. For example, using the silicon pressure sensor with the temperature compensation circuit provided by the embodiment of the present invention, the temperature range of the measured medium is -20°C to 125°C, the pressure of the measured medium is 0-16Mpa, and the output signal is 4-20mA. The supply voltage U of the silicon strain gauge bridge in =5V. Sensitivity K of bridge H and bridge M strain resistance at reference temperature (25°C) OH =125,K OM =110, the silicon strain gauge modulus is approximately 400×10 -6 / MPa. The temperature coefficient β of the bridge H H =-2.8×10 -3 , the temperature coefficient β of the bridge M M =-6×10 -3 . Resistance (R 1 ) = 150Ω, resistance (R 2 ) = 170Ω, resistance (R 4 ) = 300Ω, ...

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Abstract

The invention discloses a temperature compensation circuit of a silicon pressure sensor. The temperature compensation circuit is composed of an elastic substrate, a fixed supporting structure, a semiconductor strain resistance bridge H, a semiconductor strain resistance bridge M, an anti-phase proportional amplification circuit based on an operational amplifier and an in-phase addition circuit based on an operational amplifier. According to the invention, the sensitivity drift error of a strain resistor caused by temperature change can be compensated, the measurement precision of the pressure sensor can be improved, and compared with a temperature compensation circuit using a diode compensation method, the temperature compensation circuit has higher error compensation precision, the compensation circuit is simple in circuit structure and easy to implement, common low-cost components are used as core elements, the output result of the compensation circuit can be easily adjusted, and high-frequency harmonic waves in output signals can be eliminated.

Description

technical field [0001] The invention belongs to the field of electrical instruments and meters, and in particular relates to a temperature compensation circuit that can be used for a silicon pressure sensor. Background technique [0002] The pressure sensitive device of the silicon pressure sensor is a piezoresistive semiconductor strain diaphragm. The piezoresistive semiconductor strain diaphragm uses a single crystal silicon slice as an elastic substrate. Through semiconductor manufacturing technology, four semiconductor strain resistors are placed on the surface of the substrate in the same direction to form a Wheatstone balanced bridge. When the elastic substrate deforms under the action of external pressure, the resistance value of the semiconductor strain resistance on the surface of the elastic substrate changes, and the bridge loses balance. Ideally, the output voltage of the bridge is linear with the external pressure acting on the elastic substrate. [0003] Comp...

Claims

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Application Information

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IPC IPC(8): G01L9/06G01L1/18
CPCG01L9/065G01L1/18
Inventor 李成阳谢佩韦黎曙何忠祥贾志强
Owner WUHAN MARINE ELECTRIC PROPULSION RES INST CHINA SHIPBUILDING IND CORP NO 712 INST
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