Supercharge Your Innovation With Domain-Expert AI Agents!

Maskless laser direct writing system and maskless laser direct writing method

A laser direct writing, maskless technology, applied in the field of photolithography, can solve the problem of poor maskless patterning efficiency

Pending Publication Date: 2021-05-07
WUXI INNOVATION CENT CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the problem of poor maskless patterning efficiency in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Maskless laser direct writing system and maskless laser direct writing method
  • Maskless laser direct writing system and maskless laser direct writing method
  • Maskless laser direct writing system and maskless laser direct writing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] A maskless laser direct writing system uses multiple optical fibers to generate multiple laser beams for laser direct writing, and improves photolithography efficiency through parallel processing of beams. Since the existing mature optical lithography, especially with the increase of the wafer size, stepping lithography is mostly used, so how to use the laser direct writing system with multiple optical fibers to achieve the effect similar to optical lithography needs to be further studied. solve.

[0033] An embodiment of the present invention provides a maskless laser direct writing system, refer to figure 1 ,include:

[0034] W fiber arrays 10 (reference Figure 4 ), each fiber array 10 includes some M rows*N columns of optical fibers 100 (refer to Figure 5 ), M is an integer greater than or equal to 1, N is an integer greater than or equal to 1, and W is an integer greater than or equal to 2;

[0035] The sample stage 20 is adapted to carry a wafer to be photoet...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a maskless laser direct writing system and a maskless laser direct writing method. The maskless laser direct writing system comprises W optical fiber arrays, a sample table, a layout data conversion module and a control module, wherein each optical fiber array comprises a plurality of optical fibers arranged in M rows and N columns; the sample table is suitable for bearing a wafer to be photoetched, and the wafer to be photoetched comprises at least V chip areas; the layout data conversion module is suitable for converting a target etching layout into a modular graph according to parameters of the optical fiber array, the modular graph comprises a plurality of target graph modules, each target graph module comprises a plurality of target graph units arranged in M rows and N columns, each target pattern unit comprises a plurality of grids arranged in k rows and j columns, and any optical fiber in the wth optical fiber array is suitable for processing one target pattern unit in each target pattern module of the (i*w)th chip area. According to the maskless laser direct writing system, the patterning efficiency can be improved.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular to a maskless laser direct writing system and a maskless laser direct writing method. Background technique [0002] Lithography is an important technology to realize the transfer of chip processing graphics. Lithography is mainly divided into two categories: optical lithography and non-optical lithography. Different from optical lithography, non-optical lithography does not depend on a mask, and can directly form graphics on the wafer to be processed, which not only reduces technical complexity, but also reduces chip development costs, so it has become the next generation of attention. Photolithography. [0003] According to different lithography mechanisms, non-optical lithography is mainly divided into three categories: electron beam direct writing, ion beam direct writing and laser direct writing. Among them, laser direct writing is to form a pattern by focusing the la...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/2053G03F7/70383G03F7/7055G03F7/70725
Inventor 陈大鹏傅剑宇
Owner WUXI INNOVATION CENT CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com