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Electrically pumped vertical cavity laser

A vertical cavity, laser technology, applied in lasers, semiconductor lasers, laser parts and other directions, can solve problems such as low effect

Pending Publication Date: 2021-05-14
THORLABS INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, even if methods such as oxidation, ion implantation, or buried tunnel junctions can be employed in the GaSb / InAs material system, their effect in the current opening due to excess carrier diffusion under the current aperture may be very low

Method used

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  • Electrically pumped vertical cavity laser
  • Electrically pumped vertical cavity laser
  • Electrically pumped vertical cavity laser

Examples

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Embodiment Construction

[0023] The description of illustrative embodiments in accordance with the principles of the invention is intended to be read in conjunction with the accompanying drawings, which should be considered a part of this entire specification. In describing the embodiments of the invention disclosed herein, any reference to direction or orientation is for convenience of description only and is not intended to limit the scope of the invention in any way. Relative terms such as "lower", "higher", "horizontal", "vertical", "upper", "lower", "upward", "downward", "top" and "bottom" and their derivatives (e.g., "horizontally," "downwardly," "upwardly," etc.) direction. These relative terms are for descriptive convenience only and do not require that the device be constructed or operated in a particular orientation unless so expressly indicated. Terms such as "attached," "attached," "connected," "coupled," "interconnected," and similar terms refer to a relationship in which structures are...

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Abstract

Disclosed is an electrically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses an interband cascade gain region, two distributed mirrors, and a low-loss refractive index waveguide. A preferred embodiment includes at least one wafer bonded GaAs-based mirror.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Patent Application No. 62 / 742,637, filed October 8, 2018. The disclosure and entire teachings of US Provisional Patent Application 62 / 742,637 are hereby incorporated by reference. [0003] Statement Regarding Federally Funded Research or Development [0004] This invention was made with government support under Contract No. DE-AR0000538 awarded by the Office of the Department of Energy (DOE), Advanced Research Projects Agency-Energy (ARPA-E). The government has certain rights in this invention. technical field [0005] The present invention generally relates to mid-infrared semiconductor lasers, tunable mid-infrared semiconductor lasers and vertical cavity lasers. Background technique [0006] Operation of room temperature continuous wave (RTCW) vertical cavity lasers (VCLs) or vertical cavity surface emitting lasers (VCSELs) at wavelengths in excess of 3.0 mic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/065
CPCG01J3/108H01S5/18366H01S5/04257H01S5/18361H01S5/3402H01S5/1838H01S5/18347H01S5/18341H01S2301/176H01S5/04256H01S5/18313G01J2003/423G01N2021/399H01S5/34306H01S5/0655H01S5/18327H01S5/042H01S5/18377H01S5/0651H01S5/343H01S5/0612H01S5/3422H01S5/1014H01S5/101
Inventor V·贾亚拉曼S·西格尔K·拉斯科拉
Owner THORLABS INC