A kind of solar cell chip and its making method

Abstract

The invention discloses a solar cell chip and a manufacturing method thereof, comprising a front electrode layer, a solar function layer, a germanium substrate and a back electrode layer stacked in sequence, and the back electrode layer is provided with an upper edge on the edge of the germanium substrate, The upper edge extends to the side of the germanium substrate and covers the side of the germanium substrate, and the upper edge is used to cover the side of the germanium substrate, so that the thickness of the germanium substrate can be reduced, and the weight can be reduced. It can make up for the lack of mechanical strength due to the thinning of the germanium substrate, and can protect the germanium substrate. The germanium substrate is not easy to directly collide with external objects, and the germanium substrate is not easy to wear, which reduces the germanium substrate fragments. Rate.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solar cell chip and a manufacturing method thereof. Background technique [0002] The existing III-V compound multi-junction solar cells need to sequentially generate solar functional layers, front electrode layers, etc. on the germanium substrate during production, and lay the back electrode layer on the bottom of the germanium substrate. It is necessary that the germanium substrate has a certain thickness, and a thicker germanium substrate can also support and protect the solar functional layer. However, the solar cell with this structure is heavy and does not meet the requirements of current technology. [0003] Therefore, the current hot development direction of III-V compound multi-junction solar cells is to thin the germanium substrate, but when the germanium substrate is thinned, the accompanying problem is that the protection level of the solar functional layer is r...

AI Technical Summary

Problems solved by technology

[0002] The existing III-V compound multi-junction solar cells need to sequentially generate solar functional layers, front electrode layers, etc. on the germanium substrate during production, and lay the back electrode layer on the bottom of the germanium substrate. Need, the germanium substrate has a certain thickness, and the thicker germanium substrate can also support and protect the solar functional layer, but the solar cell with this structure is heavy, which does not meet the needs of current technology

[0003] Therefore, the current hot development direction of III-V compound multi-junction solar cells is to thin the germanium substrate, but when the germanium substrate is thinned, the accompanying problem is that the protection level of the solar functional layer is reduced, and the germanium substrate is insufficient. In order to provide sufficient mechanical strength for the solar cell, during the production and subsequent application process, when the side of the germanium substrate is subjected to external stress, it will have an impact on the germanium substrate and the solar functional layer. When the germanium substrate is worn, it is easy to Causes the leakage of electricity from the PN junction of the solar functional layer to the germanium substrate

[0004] However, in the existing production process, the structure of the solar cell to solve the above problems is relatively complicated, and the process is various, and the efficiency is low during mass production.

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