Novel driving topology and driving method and crosstalk suppression method thereof

A topology and a new type of technology, applied in high-efficiency power electronic conversion, output power conversion devices, electrical components, etc., can solve the problems of inability to achieve crosstalk suppression and inconvenient replacement

Pending Publication Date: 2021-05-18
BEIJING JIAOTONG UNIV
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  • Claims
  • Application Information

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Problems solved by technology

[0013] The above-mentioned methods suppress crosstalk by adding electronic devices at the gate-source l

Method used

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  • Novel driving topology and driving method and crosstalk suppression method thereof
  • Novel driving topology and driving method and crosstalk suppression method thereof
  • Novel driving topology and driving method and crosstalk suppression method thereof

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Embodiment Construction

[0048] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings.

[0049] like figure 1 As shown, an embodiment of the present invention provides a new driving topology of a half-bridge SiC MOSFET, which is suitable for a silicon carbide metal-oxide semiconductor field effect transistor of a half-bridge circuit, including a primary side logic processing unit LU_P, an upper bridge arm isolation unit H, Lower arm isolation unit L, upper arm secondary logic processing unit LU_H, lower arm secondary logic processing unit LU_L, upper arm multilevel drive circuit A_H, lower arm multilevel drive circuit A_L, upper arm a drive resistor network B_H, a lower arm drive resistor network B_L, an upper arm turn-off drain current detection feedback circuit C_H, and a lower arm turn-off drain current detection feedback circuit C_L;

[0050] The primary side logic processing unit includes a f...

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Abstract

The invention discloses a novel driving topology and a driving method and a crosstalk suppression method thereof, which are suitable for a silicon carbide metal-oxide semiconductor field effect transistor of a half-bridge circuit. The novel driving topology comprises a primary side logic processing unit, two isolation units, two secondary side logic processing units, two multi-level driving circuits, two driving resistance networks and two turn-off drain current detection feedback circuits. According to the present invention, the next multi-level pulse signal is determined according to the feedback information of a detection circuit, the feedback self-adaption can be detected to optimize the turn-off characteristic, and the influence of inherent detection circuit hardware delay of the detection circuit is effectively eliminated through the subtraction of the secondary side logic control units. Therefore, the turn-off transient oscillation and voltage overshoot of a half-bridge circuit switching tube are suppressed. When an active tube acts, the influence of crosstalk is suppressed by adjusting the grid-source electrode level of a passive tube, so that parasitic opening and grid-source electrode negative voltage overshoot are prevented, the use reliability of the device is improved, and the service life of the device is prolonged.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a novel driving topology of a SiC MOSFET suitable for a half-bridge circuit, a driving method thereof, and a crosstalk suppression method. Background technique [0002] Today, for high-power applications, widely used switching devices include IGBT modules composed of silicon IGBTs and fast recovery diodes and SiC MOSFET power modules. SiC MOSFETs made of silicon carbide semiconductor materials can achieve the following advantages: In high breakdown Under the field strength, a higher level of doping is achieved, so the on-resistance is smaller, and the conduction loss can be reduced and the system efficiency can be improved at the same power level. It can also reduce switching losses and improve converter efficiency; SiC MOSFET carriers drift fast, and the drift speed of 4H-SiC is twice that of Si. Furthermore, it can achieve higher switching frequency, higher operating...

Claims

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Application Information

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IPC IPC(8): H02M1/088H02M1/32
CPCH02M1/088H02M1/32Y02B70/10
Inventor 郭希铮游小杰李艳郝瑞祥王琛琛王剑周明磊部旭聪余宝伟
Owner BEIJING JIAOTONG UNIV
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