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Test methods for solar cells

A technology of solar cells and testing methods, which is applied in the field of solar power generation, can solve problems such as difficulty in evaluating the electrical properties of different film layers, and the decline in test accuracy, so as to achieve effective performance and optimize the process.

Active Publication Date: 2022-07-19
CSI CELLS CO LTD +2
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In recent years, with the continuous development of solar cell structures, some high-efficiency cells are equipped with multiple conductive film layers stacked on each other. The accuracy of existing test methods for this type of high-efficiency cells has declined, and it is difficult to evaluate different film layers. electrical properties

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Embodiment Construction

[0033] The present application will be described in detail below with reference to the embodiments shown in the accompanying drawings. However, this embodiment does not limit the present application, and the structural, method, or functional transformations made by those of ordinary skill in the art according to this embodiment are all included in the protection scope of the present application.

[0034] combine 1 to figure 2 As shown, the test methods provided in this application include:

[0035] A test sample 100 is prepared, the test sample 100 includes a silicon substrate 10 , a tunneling layer 20 located on one side of the silicon substrate 10 , and a doped polysilicon layer disposed on the side of the tunneling layer 20 away from the silicon substrate 10 30. A plurality of metal electrodes 40 disposed on the doped polysilicon layer 30. An insulating dielectric film 50 is further provided on the side of the doped polysilicon layer 30 away from the tunneling layer 20 ,...

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Abstract

The present application provides a method for testing a solar cell, including preparing a test sample, the test sample comprising a silicon substrate, a tunneling layer located on a surface of one side of the silicon substrate, and a tunneling layer disposed on the side of the tunneling layer away from the silicon substrate The doped polysilicon layer and several metal electrodes arranged on the doped polysilicon layer; according to the structure of the test sample, determine the formula of the resistance R between adjacent metal electrodes, and test to obtain N groups between different adjacent metal electrodes. The resistance R of the doped polysilicon layer is calculated to obtain the tunneling resistance R2 and the tunneling resistivity ρ1 of the tunneling layer, and the sheet resistance R3 and the square resistance R of the doped polysilicon layer. □ , the contact resistance R4 and the contact resistivity ρ2 of the metal electrode. The test method can test the square resistance of the doped polysilicon layer, the tunneling resistivity of the tunneling layer and the contact resistivity of the metal electrode, more effectively evaluate the performance of each film layer and the metal electrode of the solar cell, and is conducive to adjustment and optimization. corresponding process.

Description

technical field [0001] The present application relates to the technical field of solar power generation, and in particular, to a method for testing solar cells. Background technique [0002] TLM (Transmission Line Method) is a test method for semiconductor sheet resistance and contact resistivity characterization, which is widely used in the photovoltaic industry because of its simple operation and relatively accurate test results. This method is often used to characterize the emitter sheet resistance of solar cells and the contact resistivity of the front metal electrode. The monitoring of the emitter sheet resistance is an important basis for the optimization of the diffusion process; An important measure of the quality of the bottom ohmic contact, the smaller the contact resistivity, the better the performance of the corresponding solar cell. [0003] In recent years, with the continuous development of the solar cell structure, some high-efficiency cells are provided wit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66G01R31/389
CPCH01L22/14H01L22/20G01R31/389
Inventor 安欣睿陈海燕李硕张临安邓伟伟
Owner CSI CELLS CO LTD
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