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Vertical graphene-based thermal interface material and preparation method and device thereof

A thermal interface material, graphene-based technology, applied in the field of graphene, can solve problems that are difficult to fully meet practical needs, and achieve the effects of strong repeatability, simple process flow, and simple equipment

Active Publication Date: 2021-05-25
BEIJING GRAPHENE INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the vertical thermal conductivity of the graphene-based thermal interface materials prepared by the various methods mentioned above is less than 50W / m·K, which is difficult to fully meet the practical needs.

Method used

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  • Vertical graphene-based thermal interface material and preparation method and device thereof
  • Vertical graphene-based thermal interface material and preparation method and device thereof
  • Vertical graphene-based thermal interface material and preparation method and device thereof

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preparation example Construction

[0042] The preparation method of the vertical graphene-based thermal interface material according to one embodiment of the present invention comprises:

[0043] Apply an electric field to the reaction chamber 11 (reaction system) through the electric field generating component;

[0044] generating plasma in the reaction chamber 11; and

[0045] A carbon source is introduced into the reaction chamber 11 to grow vertical graphene 50 on the substrate 40 .

[0046] In one embodiment, vertical graphene 50 refers to graphene arranged perpendicular to the substrate 40 .

[0047] In one embodiment, the graphene grows in a bottom-up direction perpendicular to the substrate 40 .

[0048] In one embodiment, the base 40 is disposed on the second electrode plate 32 .

[0049] In one embodiment, the substrate 40 may be graphite paper.

[0050] In one embodiment, during the plasma-enhanced chemical vapor deposition process, the power of the plasma source is 100-500W, such as 200W, 250W, ...

Embodiment 1

[0073] The reaction temperature was set to 650°C, the power of the plasma source was set to 250W, and a voltage of 60V was introduced into the plasma-enhanced chemical vapor deposition system, and the upper plate was the negative plate (connected to the negative pole of the DC power supply), and the lower plate was It is a positive plate (connected to the positive pole of the DC power supply), the distance between the two plates is 1cm, methanol is added as a carbon source, and it is grown for 1h to form a vertical graphene array on the graphene paper. Physical pictures of graphite paper before and after vertical graphene growth Figure 2A1 , 2A2 shown; the scanning electron microscope image of the vertical graphene array is shown in 2B, and the Raman result is shown in Figure 2C As shown, the transmission electron microscope TEM results are as follows Figure 2D As shown, the X-ray photoelectron spectroscopy XPS results are as follows Figure 2E , 2F shown.

Embodiment 2

[0075] The reaction temperature is set to 650°C, the power of the plasma source is set to 250W, a voltage of 150V is introduced into the plasma enhanced chemical vapor deposition system, and the upper plate is the negative plate, the lower plate is the positive plate, and the distance between the two plates is 1cm, add methanol as a carbon source, grow for 1h, and form vertical graphene arrays on graphene paper. Physical pictures of graphite paper before and after vertical graphene growth Figure 3A1 , 3A2 shown; the scanning electron microscope image of the vertical graphene array is shown in 3B, and the Raman result is shown in Figure 3C shown.

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Abstract

The invention provides a vertical graphene-based thermal interface material and a preparation method and device thereof. The method comprises the following step: preparing vertical graphene through a plasma enhanced chemical vapor deposition process under the action of an electric field, wherein the direction of the electric field is the same as the growth direction of the vertical graphene. According to the method provided by an embodiment of the invention, adopted equipment is simple, process flow is simple, and good repeatability is achieved.

Description

technical field [0001] The invention relates to graphene, in particular to a preparation method and a preparation device of a vertical graphene-based thermal interface material. Background technique [0002] With the development of electronic devices in the direction of miniaturization and high power density, how to effectively conduct the heat generated in the integrated circuit and explore efficient heat dissipation technology has gradually become an urgent problem to be solved (A.A.Balandin, et al.Nat.Mater. 2011, 10, 569). Among them, thermal interface materials are used as heat dissipation components in integrated circuits, and their thermal conductivity directly determines the efficiency of heat dissipation. The theoretical in-plane thermal conductivity of graphene is as high as 5000W / m·K, and it is considered to be one of the ideal materials for preparing thermal interface materials (A.A.Balandin, et al. Nano Lett. 2008, 8, 902). How to extend the excellent thermal ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186C09K5/14
CPCC01B32/186C09K5/14C01B2204/04C01B2204/24
Inventor 张锦许世臣姬楠楠陈卓
Owner BEIJING GRAPHENE INST
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