Method for centrifugally binding ITO rotating target

A rotating target and binding technology, applied in ion implantation plating, metal material coating process, vacuum evaporation plating, etc., can solve problems such as difficulties, easy to cause voids, and increase in resistance, achieve good results and improve product quality , Improve the effect of welding rate

Active Publication Date: 2021-05-25
HUNAN KOSEN NEW MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Since the rotating target is in the shape of a cylinder and is placed outside the back tube, the gap between the two is not large, so it is difficult to perfuse indium in the gap, which will easily cause gaps and the binding rate is not stable enough.
On the other hand, liquid indium is easy to produce oxides during the flow, and these oxides are sandwiched in the indium layer, which will cause an increase in resistance, and local overheating and other problems are prone to occur during use.
It also affects the combination and binding rate between the two
In the binding of the rotating target, it is difficult to clean the oxide in the gap

Method used

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  • Method for centrifugally binding ITO rotating target
  • Method for centrifugally binding ITO rotating target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0031] Embodiment: a kind of method of centrifugal binding ITO rotating target material, such as Figure 1-2 shown, including the following steps:

[0032] S1, preprocessing

[0033] The inner wall of the ITO target tube 13 and the outer surface of the back tube 5 are metallized, the ITO target tube 13 and the back tube 5 are both cylindrical, and the inner diameter of the ITO target tube 13 matches the back tube 5 .

[0034] The metallization process of the inner wall of the ITO target tube 13 is as follows:

[0035] Paste transparent high-temperature-resistant tape on the outer surface and both sides of the ITO target tube 13, and then put it into a tubular heating furnace for heating. The inner wall of the ITO target tube 13 is moved on the inner wall of the ITO target tube 13 with an arc-shaped ultrasonic gun head to perform ultrasonic injection, so that an indium layer with a thickness of 0.1-0.2 mm is formed on the inner wall of the ITO target tube 13 .

[0036] Prefe...

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PUM

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Abstract

The invention discloses a method for centrifugally binding an ITO (Indium Tin Oxide) rotating target, and belongs to the technical field of ITO rotating target processing. The method comprises the following steps of: S1, pretreatment: carrying out metallization treatment on the inner walls of ITO target tubes and the outer surface of a back tube; S2, assembling: inserting the back tube downwards from the upper part of an electric heating pipe to insert the back tube into an insertion groove in the top surface of a mounting base and insert a positioning cylinder on the mounting base into the back tube, sleeving the back tube with a single ITO target tube, inserting the ITO target tube into the insertion groove in the top surface of the mounting base, and forming a gap between the ITO target tube and the back tube; and S3, indium filling and binding: gradually binding the single ITO target tubes from bottom to top. According to the method, through rotating centrifugation, molten indium is tightly attached to the inner walls of the ITO target tubes, and the binding rate is high.

Description

technical field [0001] The invention relates to the technical field of ITO rotating target processing, more specifically, it relates to a method for centrifugally binding an ITO rotating target. Background technique [0002] The rotating target is a magnetron target, which is mainly used in solar cells, architectural glass, automotive glass, semiconductors, flat-panel TVs and other fields. The target is cylindrical and contains a stationary magnet that rotates at a slow speed. ITO is an N-type oxide semiconductor-indium tin oxide. As a nano-indium tin metal oxide, it has good conductivity and transparency, and can cut off harmful electron radiation, ultraviolet rays and far infrared rays that are harmful to the human body. Therefore, indium tin oxide is usually sprayed on glass, plastic and electronic display screens, used as a transparent conductive film, and at the same time reduces harmful electron radiation and ultraviolet and infrared radiation. [0003] Since the rot...

Claims

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Application Information

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IPC IPC(8): C23C14/35
CPCC23C14/3414C23C14/35Y02P10/20
Inventor 郑保昌史伟卫义成钟雪琴欧阳光华万如意
Owner HUNAN KOSEN NEW MATERIAL
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