InP-based spot size converter and spot size conversion structure, and preparation methods thereof

A technology of mold spot converter and conversion structure, which is applied in the direction of light guide, optics, optical components, etc., and can solve the problems of increasing packaging cost and large size

Active Publication Date: 2021-05-28
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, for the vertical taper, a single material composition of In x Ga 1-x As y P 1-y , achieve high coupling efficiency through adiabatic transmission of about 1mm, the required size is large, and the packaging cost is increased

Method used

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  • InP-based spot size converter and spot size conversion structure, and preparation methods thereof
  • InP-based spot size converter and spot size conversion structure, and preparation methods thereof
  • InP-based spot size converter and spot size conversion structure, and preparation methods thereof

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preparation example Construction

[0023]According to an embodiment of the present invention, a method for preparing the above-mentioned InP-based SSC is provided, including: sequentially forming two or more layers of In x Ga 1-x As y P 1-y layer to obtain a vertical tapered structure.

[0024] According to an embodiment of the present invention, the In x Ga 1-x As y P 1-y The layers are formed by metalorganic chemical vapor deposition. It is easier to prepare In by using the method of organometallic chemical vapor deposition x Ga 1-x As y P 1-y layer.

[0025] According to an embodiment of the present invention, a speckle conversion structure is provided, comprising: a substrate; an InP buffer layer formed on the substrate; x Ga 1-x As y P 1-y Layers and InP layers alternately arranged diluted waveguide layer, formed on the InP buffer layer; above-mentioned InP-based SSC, formed on the InP layer of the diluted waveguide (DW) layer; wherein, the InP-based SSC and DW In x Ga 1-x As y P 1-y La...

Embodiment 1

[0037] Such as Figures 1 to 3 As shown, a speckle conversion structure includes: InP substrate, InP buffer layer, DW layer, InP-based SSC and ridge waveguide from bottom to top, wherein, SSC is In x Ga 1-x As y P 1-y , each In x Ga 1-x As y P 1-y The layers from bottom to top are as follows: the peak Q of photoluminescence spectrum is 1.06, the thickness is 630nm, and the refractive index is n 1 =3.268; the photoluminescence spectrum peak Q is 1.15, the thickness is 210nm, and the refractive index is n 2 = 3.304. The peak Q of the photoluminescence spectrum of the ridge waveguide material is 1.06. In the 1550nm band, the numerical simulation of the light field speckle conversion efficiency is carried out for this speckle conversion structure, and the simulation results are as follows image 3 shown.

Embodiment 2

[0039] Such as Figures 1 to 3 As shown, a mode spot conversion structure, including from bottom to top: InP substrate, InP buffer layer, DW layer, InP-based SSC and ridge waveguide, wherein, SSC adopts three-layer refractive index square gradient to increase In x Ga 1-x As y P 1-y , from bottom to top, the peak Q of the photoluminescence spectrum is 1.06, the thickness is 630nm, and the refractive index is n 1 =3.268; the peak Q of the photoluminescence spectrum is 1.15, the thickness is 110nm, and the refractive index n 2 =3.304; the photoluminescence spectrum peak Q is 1.06, and the refractive index is n at a thickness of 100nm 1 = 3.268. The peak Q of the photoluminescence spectrum of the ridge waveguide material is 1.06. In the 1550nm band, the numerical simulation of the light field speckle conversion efficiency is carried out for this speckle conversion structure, and the simulation results are as follows image 3 shown.

[0040] After the entire mode spot conve...

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Abstract

The invention discloses an InP-based spot size converter and a spot size conversion structure, and preparation methods thereof, wherein the InP-based spot size converter comprises two or more layers of In[x]Ga[1-x]As[y]P[1-y] layers with different components, wherein the two or more layers of In[x]Ga[1-x]As[y]P[1-y] layers form a vertical conical structure, x is more than 0 and less than 1, y is more than 0 and less than 1, each In[x]Ga[1-x]As[y]P[1-y] layer has refractive index distribution gradually changing along a first direction, and the first direction is a thickness direction along which the size of the spot size of the spot converter is reduced. The spot size converter with gradually changing refractive index distribution is introduced, the highly-integrated and high-conversion-efficiency spot size converter is prepared, small-size and high-efficiency spot size conversion is achieved, a compact conversion waveguide device is achieved, and the packaging cost is reduced.

Description

technical field [0001] The invention relates to the field of optical integrated devices, in particular to an InP-based mode speckle converter, a mode speckle conversion structure and a preparation method. Background technique [0002] The rapid development of optical communication technology has greatly promoted large-capacity, high-speed, and low-loss communication methods. All countries in the world have strengthened the research and development of optical integrated devices. Whether the research and development of various optical integrated devices can go out of the laboratory and become practical , service communication technology, the key technology is to realize the efficient coupling of optical fiber and waveguide. In x Ga 1-x As y P 1-y The material, whose bandgap wavelength covers 1um-1.6um, meets the 1.55um and 1.31um communication bands of the optical fiber low loss and low dispersion window, and is a direct bandgap material with excellent device performance. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/14G02B6/13
CPCG02B6/14G02B6/13G02B2006/12078
Inventor 王亮何伟蒋忠君张博健
Owner UNIV OF SCI & TECH OF CHINA
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