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Resistive memory with self-termination control function and self-termination control method

A technology of control function and control method, which is applied in information storage, static memory, digital memory information and other directions, and can solve problems such as target value offset of memory cells

Pending Publication Date: 2021-05-28
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the write termination timing varies due to temperature or process, the final low resistance of the memory cell also shifts from the target value

Method used

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  • Resistive memory with self-termination control function and self-termination control method
  • Resistive memory with self-termination control function and self-termination control method
  • Resistive memory with self-termination control function and self-termination control method

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Embodiment Construction

[0050] In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, existing structures and devices are shown schematically in order to simplify the drawings.

[0051] figure 1 A block diagram illustrating a resistive memory according to an embodiment of the present invention. see figure 1 The resistive memory 100 includes at least one memory cell MC, a source line control circuit 110 , a current reference circuit 120 , a bit line control circuit 130 and a word line control circuit 140 . The memory cell MC is disposed at the intersection between the bit line BL and the word line WL, and includes a transistor TC and a resistor RC. The resistance of the resistive component RC is variable and changed by a write operation su...

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Abstract

A resistive memory with a self-termination control function and a self-termination control method for a resistive memory are provided. At least one memory cell comprises a cell transistor and a resistive element. A termination switch coupled to a source line terminates a write operation according to a comparison result. The comparator compares a voltage of a source line node with a reference voltage to output the comparison result, wherein the source line node is between the at least one memory cell and the termination switch, and the voltage of the source line node responses to the resistance of the resistive element. The variable resistance circuit provides an effective resistance according to a target resistance of the resistive element and outputs a reference current. The reference voltage node is coupled to the variable resistance circuit and the comparator and receives the reference current to provide the reference voltage to the comparator.

Description

technical field [0001] The invention relates to a non-volatile memory, in particular to a resistance memory with a self-termination control function and a self-termination control method. Background technique [0002] Resistive random access memory (RRAM) is a type of non-volatile memory and has advantages such as simple structure, large capacity, low cost, low power and high speed. Each memory cell of the RRAM can have a binary state, namely a high resistance state (HRS) and a low resistance state (LRS). Write current is applied to selected memory cells to change state. When performing a SET operation, the write current is increased by current increments until the selected memory cell is switched from HRS to LRS. However, as the write termination timing varies due to temperature or process, the final low resistance of the memory cell also shifts from the target value. Therefore, how to avoid low resistance deviation and propose a stable self-termination circuit has becom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00
CPCG11C13/0026G11C13/0069G11C2013/0071G11C13/0028G11C13/003G11C13/0023G11C2213/79G11C2213/82G11C13/0064G11C2013/0066G11C2013/0078
Inventor 柳德铉林纪舜
Owner WINBOND ELECTRONICS CORP