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Epitaxial wafer carrier of etching and baking equipment

A technology of baking equipment and epitaxial wafers, which is applied in the direction of discharge tubes, electrical components, and post-processing details, etc., can solve the problems of high etching cost and low output, and achieve space saving, increase in quantity, and save etching and baking cost effect

Pending Publication Date: 2021-06-01
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the related technology, the etching furnace machine relies on the graphite disk as the carrier for the etching sheet. Two graphite disks are placed in the reaction chamber of the furnace. The surface of each graphite disk is evenly distributed with a number of slots on the same horizontal plane, such as 14 pieces of slots, the graphite plate can hold 14 pieces of 4-inch PSS (Patterned Sapphire Substrate, patterned sapphire substrate), the production capacity of each furnace is 28 pieces, the output is low, and the etching cost is relatively high

Method used

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  • Epitaxial wafer carrier of etching and baking equipment
  • Epitaxial wafer carrier of etching and baking equipment
  • Epitaxial wafer carrier of etching and baking equipment

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Embodiment Construction

[0053] In order to make the objectives, technical solutions and advantages of the present disclosure clearer, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0054] figure 1It is a schematic structural diagram of an etching wafer carrier in the related art provided by the embodiment of the present disclosure. see figure 1 , the etching wafer carrier includes a base 801 and a graphite disk 802 . The base 801 is provided with a groove 8011, and two graphite discs 802 can be placed in the groove 8011. There are 14 sheet grooves 8021 evenly distributed on the disk surface of the graphite disk 802 on the same horizontal plane, and each sheet groove 8021 can accommodate one sheet of 4-inch PSS. like figure 1 As shown, two graphite disks 802 are placed on the groove 8011 in a vertical position opposite to each other. The PSSs placed on the graphite disk 802 are all facing outward to fully contact ...

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Abstract

The invention provides an epitaxial wafer carrier of etching and baking equipment, and belongs to the technical field of etching and baking equipment. The epitaxial wafer carrier comprises a base and a wafer placing support, wherein the wafer placing support comprises a first vertical plate, a second vertical plate and a wafer placing assembly, the first vertical plate and the second vertical plate are arranged in parallel and opposite through a first connecting piece, and the wafer placing assembly is arranged between the first vertical plate and the second vertical plate so as to place a plurality of epitaxial wafers between the first vertical plate and the second vertical plate in a stacked manner; and the wafer placing support is detachably installed on the base through the first vertical plate and the second vertical plate. The epitaxial wafer carrier can increase the number of epitaxial wafers placed on the epitaxial wafer carrier.

Description

technical field [0001] The present disclosure relates to the technical field of etching and baking equipment, in particular to an epitaxial wafer carrier of the etching and baking equipment. Background technique [0002] Semiconductor LED (Light Emitting Diode, light-emitting diode) has the advantages of high efficiency, energy saving and green environmental protection, and has a wide range of applications in the fields of traffic indication and outdoor full-color display. Due to abnormal factors such as equipment, process, and production, some LED epitaxial wafers grown in MOCVD (Metal-organic Chemical Vapor Deposition, Metal-organic Chemical Vapor Deposition) equipment did not meet the standard requirements, and were scrapped. The scrapped LED epitaxial wafers) cannot be reused, resulting in greater losses. In order to achieve loss recovery, the scrap sheet can be etched through an etching furnace to peel off the grown GaN film on the scrap substrate, so as to achieve the...

Claims

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Application Information

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IPC IPC(8): H01L21/687H01J37/32C30B33/12
CPCH01L21/68771H01L21/68785H01J37/32715C30B33/12Y02P70/50
Inventor 王飞刘华明黄李园薛涛
Owner HC SEMITEK ZHEJIANG CO LTD
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