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CMOS image sensor and manufacturing method thereof

A technology of an image sensor and a manufacturing method, applied in the field of optics, capable of solving problems such as photosensitive diode photosensitive sensitivity and full-well capacity deterioration, and achieving the effects of increased pixel density, high full-well capacity, and high energy utilization

Active Publication Date: 2021-06-01
UNITED MICROELECTRONICS CENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the photosensitive sensitivity and full well capacity of the photodiode become worse with the smaller its area, so the reduction of pixel size is limited; at the same time, the filter plate on the top of the photosensitive unit further limits the reduction of pixel size

Method used

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  • CMOS image sensor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0107] A kind of manufacturing method of CMOS image sensor is provided in this embodiment, please refer to figure 1 , shown as a process flow diagram of the method, comprising the following steps:

[0108] S1: providing a matrix layer;

[0109] S2: forming a photosensitive unit in the matrix layer, the photosensitive unit includes a transparent electrode layer, a photosensitive layer and a metal electrode layer arranged in sequence in the horizontal direction.

[0110] See first figure 2 and image 3 , performing the step S1: providing a matrix layer 101 .

[0111] As an example, a readout circuit is fabricated first, and then the matrix layer 101 is formed on the readout circuit. In this embodiment, the readout circuit includes a substrate layer 102, a readout circuit active region 103 located in the substrate layer 102, and an interconnection layer located on the substrate layer 102, and the interconnection layer includes layers Interlayer 104 and metal interconnection...

Embodiment 2

[0134] This embodiment provides a method for fabricating a CMOS image sensor, which performs basically the same steps as in Embodiment 1, the difference being that in Embodiment 1, the photosensitive unit is used as a component of the pixel structure, while in this embodiment, the photosensitive The cells act as part of the isolation structure between the pixel structures.

[0135] See first Figure 13 , performing the step S1: providing a matrix layer 201 .

[0136] As an example, the host layer 201 may be a silicon substrate, a germanium substrate, a silicon-on-insulator substrate, a III-V compound substrate or other suitable semiconductor substrates, which may be P-type doped or N-type doped. miscellaneous.

[0137] As an example, the matrix layer 201 is provided with a plurality of photodiodes arranged at intervals in the horizontal direction. In this embodiment, the plurality of photodiodes include a first photodiode 202a, a second photodiode 202b and a third photodiod...

Embodiment 3

[0154] A CMOS image sensor is provided in this embodiment, please refer to Figure 12 , which is a schematic structural diagram of the CMOS image sensor, including a matrix layer (not shown) and a photosensitive unit, the photosensitive unit is located in the matrix layer, and the photosensitive unit includes transparent electrode layers 108 arranged in sequence in the horizontal direction , photosensitive layer and metal electrode layer 110 .

[0155] As an example, the photosensitive unit includes an optical thinning medium layer 109, the transparent electrode layer 108 surrounds the optical thinning medium layer 109, the photosensitive layer surrounds the transparent electrode layer 108, and the metal electrode layer 110 surrounds the photosensitive layer.

[0156] As an example, the CMOS image sensor includes a plurality of photosensitive units, and the metal electrode layers 110 of two adjacent photosensitive units are connected.

[0157] As an example, the CMOS image s...

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Abstract

The invention provides a CMOS image sensor and a manufacturing method thereof. The method comprises the following steps: providing a substrate layer; and forming a photosensitive unit in the substrate layer, wherein the photosensitive unit comprises a transparent electrode layer, a photosensitive layer and a metal electrode layer which are sequentially arranged in the horizontal direction;. In the invention, the photosensitive unit can be used as a photosensitive component in the pixel structure to replace a photodiode, the photosensitive surface of the photosensitive layer is longitudinally arranged, so that the pixel density can be greatly improved; and an additional light filter plate is not needed, so that the pixel size is easy to be further reduced. The photosensitive unit can also be used as an isolation structure between pixel structures, and the photosensitive layer around one photodiode can absorb the light emitted by the photodiode to the adjacent photodiode and convert the light into a photoelectric signal, so that the energy utilization rate of the incident light is high, the full well capacity of the pixel is high, and optical crosstalk can be effectively inhibited. In addition, due to the fact that the energy utilization rate of the incident light is high, the pixel size can be made smaller.

Description

technical field [0001] The invention belongs to the field of optical technology, and relates to a CMOS image sensor and a manufacturing method thereof. Background technique [0002] In a traditional color CMOS image sensor (CIS) based on Bayer filters, photosensitive units with different colors have different filter plates on top, and the photosensitive units are photodiodes. With the continuous improvement of people's requirements for imaging resolution, the area of ​​photosensitive diodes in CIS is getting smaller and smaller. However, the photosensitivity and full well capacity of the photodiode become worse with the smaller its area, so the reduction in pixel size is limited; meanwhile, the filter plate on the top of the photosensitive unit further limits the reduction in pixel size. [0003] Therefore, how to further reduce the pixel size while ensuring photosensitive performance has become an important technical problem to be solved urgently by those skilled in the ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1461H01L27/1463H01L27/14645H01L27/14683
Inventor 胡欢朱克宝陈世平陈鹏堃
Owner UNITED MICROELECTRONICS CENT CO LTD