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Transparent conductive film and preparation method thereof

A technology of transparent conductive film and conductive layer, applied in the direction of equipment for manufacturing conductive/semiconductive layer, cable/conductor manufacturing, conductive layer on insulating carrier, etc., can solve uneven stress distribution, warping, conductive oxidation Problems such as cracking of the material layer, to achieve the effects of not easy to crack or warp, good performance, and improved stability

Active Publication Date: 2021-06-04
大正(江苏)微纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a transparent conductive film and its preparation method, to further reduce the square resistance of the transparent conductive film, and to solve the cracking or warping of the conductive oxide layer caused by the uneven stress distribution of the transparent conductive film during annealing question

Method used

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  • Transparent conductive film and preparation method thereof
  • Transparent conductive film and preparation method thereof
  • Transparent conductive film and preparation method thereof

Examples

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preparation example Construction

[0044] The present invention also provides a preparation method of a transparent conductive film, comprising:

[0045] Prepare the first conductive layer on the surface of the transparent substrate:

[0046] Depositing a layer of conductive oxide on the surface of the transparent substrate, and then annealing to obtain the first conductive layer, wherein the annealing temperature is 120-170° C., and the annealing time is 20-40 minutes;

[0047] Prepare the second conductive layer on the surface of the first conductive layer:

[0048] Coating, depositing or printing a conductive material on the surface of the first conductive layer to form a second conductive layer containing a pattern;

[0049] Prepare the third conductive layer on the surface of the second conductive layer:

[0050] A layer of conductive oxide is deposited on the surface of the second conductive layer to form a third conductive layer.

[0051] In the present invention, the first conductive layer containing...

Embodiment 1

[0084]

[0085] The first conductive layer of ITO was prepared by vacuum magnetron sputtering on the surface of a PEN transparent substrate with a thickness of 125 μm, and then annealed at 120° C. for 40 minutes. The thickness of the first conductive layer is 100 nm.

[0086]

[0087] After mixing and dispersing the silver nanowires and absolute ethanol evenly, a nanometer metal wire slurry with a concentration of 8 mg / ml was obtained. The nanowires have a length of 20 μm and a diameter of 30 nm.

[0088]The nano metal wire slurry is coated on the surface of the first conductive layer through a slit coating die, and the second conductive layer is formed after curing; wherein, the curing temperature is 100° C., and the curing time is 15 minutes. The thickness of the second conductive layer is 80nm, which is the thickness of the nano-silver wire layer, the line width of the nano-silver wire is 20 μm, and the line spacing is 500 μm.

[0089]

[0090] Reactive plasma depos...

Embodiment 2

[0092] Except in , the annealing temperature of the first conductive layer is 140°C, the annealing time is 35min, and the thickness of the first conductive layer is 50nm; in , the nano-metal The concentration of the wire slurry is 8mg / ml, the curing temperature is 110°C, the curing time is 12min, and the thickness of the second conductive layer is 120nm; in , the third conductive layer is made by controlling the RPD deposition time Except for the thickness of the layer being 40 nm, the rest is the same as in Example 1.

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Abstract

The invention provides a transparent conductive film and a preparation method thereof. The transparent conductive film sequentially comprises a transparent substrate, a first conductive layer, a second conductive layer and a third conductive layer from bottom to top. The first conductive layer and the third conductive layer respectively and independently contain conductive oxides, and the second conductive layer contains metal or carbon materials. The thickness of the first conductive layer is 25-100 nm, the thickness of the second conductive layer is 50-150 nm, and the thickness of the third conductive layer is 5-50 nm. The transparent conductive film prepared by the preparation method has low sheet resistance and high light transmittance, is not easy to crack or warp, and has better performance.

Description

technical field [0001] The invention relates to the technical field of conductive films, in particular to a transparent conductive film and a preparation method thereof. Background technique [0002] Transparent conductive film is a film that can conduct electricity and has high light transmittance in the visible light range, and is widely used in optical devices, display devices, touch screens, thin-film photovoltaic modules and other fields. [0003] The transparent conductive film is mainly a transparent conductive oxide (TCO) conductive film. The base material is usually polyethylene terephthalate (PET), and the conductive layer is usually indium tin oxide (ITO). This conductive film has good flexibility, but its resistance performance and light transmittance performance still need to be improved. [0004] In the prior art, a layer of transparent oxide film is obtained by vacuum magnetron sputtering method on the surface of metal grid, and a transparent conductive film ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14H01B13/00
CPCH01B5/14H01B13/0026H01B13/0016
Inventor 虞旺刘克永
Owner 大正(江苏)微纳科技有限公司