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Silicon-based real RGB display device

A display device, a real technology, applied in semiconductor devices, electric solid state devices, semiconductor/solid state device manufacturing, etc., can solve the problems of short life and low performance

Pending Publication Date: 2021-06-08
ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above-mentioned technical problems, the present invention provides a silicon-based real RGB display device, which can solve the problems of low performance and short service life of existing silicon-based real RGB display devices

Method used

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  • Silicon-based real RGB display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A silicon-based true RGB display device, such as figure 1 As shown, a mixed structure layer 2 is arranged between the ITO anode 1 and the hole blocking layer 3 of the silicon-based real RGB display device;

[0037] The mixed structure layer 2 includes a red light optical compensation layer 2-1, a hole injection layer 2-2, a hole transport layer 2-3, a common blue light emitting layer 2-4, a red light emitting layer 2-5 and a green light emitting layer. Light-emitting layer 2-6;

[0038] Wherein, the red light optical compensation layer is disposed on the ITO anode, but the upper surface of the ITO anode is not completely covered by the red light optical compensation layer.

[0039] The red light-emitting optical compensation layer is arranged corresponding to the same width as the red-light emitting layer; the red-light emitting layer and the green-light emitting layer are adjacently arranged in parallel.

[0040] The hole injection layer is arranged on the red light...

Embodiment 2

[0067] A silicon-based real RGB display device, a mixed structure layer 2 is arranged between the ITO anode 1 and the hole blocking layer 3 of the silicon-based real RGB display device;

[0068] The mixed structure layer 2 includes a red light optical compensation layer 2-1, a hole injection layer 2-2, a hole transport layer 2-3, a common blue light emitting layer 2-4, a red light emitting layer 2-5 and a green light emitting layer. Light-emitting layer 2-6;

[0069] Wherein, the red light optical compensation layer is disposed on the ITO anode, but the upper surface of the ITO anode is not completely covered by the red light optical compensation layer.

[0070] The red light-emitting optical compensation layer is arranged corresponding to the same width as the red-light emitting layer; the red-light emitting layer and the green-light emitting layer are adjacently arranged in parallel.

[0071] The hole injection layer is arranged on the red light optical compensation layer a...

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Abstract

The invention discloses a silicon-based real RGB display device. A mixed structure layer is arranged between an ITO anode and a hole barrier layer of the silicon-based real RGB display device; the mixed structure layer comprises a red light optical compensation layer, a hole injection layer, a hole transport layer, a common blue light emitting layer, a red light emitting layer and a green light emitting layer; the red light optical compensation layer is arranged on the ITO anode, but the upper surface of the ITO anode is not completely covered by the red light optical compensation layer; and the common blue light emitting layer is arranged below the hole barrier layer, or the common blue light emitting layer is arranged above the hole transport layer. According to the technical scheme, the color gamut of the silicon-based real RGB display device is improved, and the color gamut value can be increased to 110% or above; and a charge generation layer (CGL) does not need to be arranged, the crosstalk problem in the silicon substrate can be reduced, only two FMMs are used in the preparation process, and the urgent requirement for the real RGB high PPI of the silicon substrate is met.

Description

technical field [0001] The invention belongs to the technical field of RGB display devices, in particular to a silicon-based real RGB display device. Background technique [0002] Compared with the traditional AMOLED display technology, the silicon-based OLED microdisplay is based on a single crystal silicon chip, and with the help of a mature CMOS process, the pixel size is smaller and the integration level is higher. It can be made into a near-eye display comparable to a large-screen display. products have received widespread attention. Based on its technical advantages and broad market, silicon-based OLED microdisplays will set off a new wave of near-eye displays in the military and consumer electronics fields, bringing unprecedented visual experience to users. [0003] Most of the existing high-ppi silicon-based OLED full-color products adopt WOLED (white OLED) + CF (color filter) technology, and the device structure used is generally a two-layer device structure, which...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/32H01L51/50
CPCH10K59/35H10K59/353H10K50/13
Inventor 李维维刘胜芳赵铮涛吕磊许嵩李雪原
Owner ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD