Memory based on spin texture, and preparation method thereof

A memory and texture technology, applied in the storage field, can solve the problems of inability to further reduce the size, fail to meet high-density integration, and limited information writing speed, and achieve fast information reading speed, low power consumption, and small size Effect

CN112928158AInactive Publication Date: 2021-06-08UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2021-06-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a memory based on spin texture. The memory comprises a substrate, a ferroelectric layer and a ferromagnetic layer; the ferroelectric layer is located on the substrate; the ferromagnetic layer is located on the ferroelectric layer; and the material of the substrate is a conductive material, the material of the ferroelectric layer is GeTe, SnTe or HfO2, and the material of the ferromagnetic layer is a material which conducts electrons and has spin polarization. The memory disclosed by the invention has the advantages of low power consumption, small size, high-density integration, simple structural design, high read-write speed and compatibility with a CMOS process. The invention also relates to a preparation method of the memory based on the spin texture.
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Description

technical field

[0001] The invention belongs to the field of memory technology, and in particular relates to a memory based on spin texture and a preparation method thereof. Background technique

[0002] More than half a century has passed since the invention of memory. With the rise and rapid development of new information technologies such as artificial intelligence, the Internet of Things, and big data, the amount of data is growing explosively, and the demand for data storage and processing speed is also increasing. getting stronger. Therefore, the bottleneck problem of storage is becoming more and more prominent in the development of modern information society. In order to solve this problem, the current main technical solutions include magnetic field writing MRAM based on spintronics and SOT- and STT-MRAM based on spin interaction. FRAM based on electrical materials, PRAM based on material phase change and RRAM based on resistive switching effect.

[0003] MRAM: Its ...

Examples

Embodiment Construction

[0032] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0033] like figure 1 As shown, a spin texture-based memory provided by an embodiment of the present invention includes a substrate 1, a ferroelectric layer 2 and a ferromagnetic layer 3;

[0034] The ferroelectric layer 2 is located on the substrate 1;

[0035] The ferromagnetic layer 3 is located on the ferroelectric layer 2;

[0036] The material of the substrate 1 is a conductive material, and the material of the ferroelectric layer 2 is GeTe, SnTe or HfO 2 , the material of the ferromagnetic layer 3 is a material that conducts electrons with spin polarization.

[0037] In the above embodiment, the substrate 1 and the ferromagnetic layer 3 can be used as electrodes to apply an electric field to the ferroelectr...