Method and device for multi-wire cutting of crystal bar

Abstract

The embodiment of the invention discloses a method and device for multi-wire cutting of a crystal bar. The method can comprise the steps that on the basis of opposite movement between the to-be-machined crystal bar and a cutting line in high-speed reciprocating motion in the vertical direction, the cutting line makes contact with the to-be-machined crystal bar, and the to-be-machined crystal bar is cut; and in the process that the to-be-machined crystal bar is cut by the cutting line, the to-be-machined crystal bar is controlled to rotate around the axis according to a set rotation strategy.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of wafer processing, and in particular to a method and device for multi-wire cutting crystal ingots. Background technique [0002] Multi-wire cutting technology is currently an advanced slicing processing technology. Its principle is that the cutting wire passes through a set of grooved wheels to form a steel wire mesh with different pitches, and uses the high-speed reciprocating motion of the cutting wire to bring the abrasive into the material to be cut (such as silicon rods). The processing area is ground, and the workpiece to be cut is fed vertically through the lifting of the worktable, so that the workpiece is simultaneously cut into several slices (such as wafers) of required size and shape. Generally, the abrasive used in the multi-wire cutting process is preferably mortar, which can not only help grinding, but also play a cooling role in the multi-wire cutting process. [0003...

AI Technical Summary

Problems solved by technology

[0003] As the size of the wafer increases and the diameter of the cutting wire decreases, the sawing path increases and the saw kerf becomes narrower during the multi-wire cutting process, and the sawdust (silicon powder) is also difficult to remove, resulting in mortar It is difficult to enter the dicing groove, resulting in the heat generated during the multi-wire dicing process cannot be effectively discharged, resulting in local overheating of the wafer and warping, and even wire breakage

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