Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of flexible planar detector pin chip and its manufacturing method and application

A detector and planar technology, applied in the field of photodetectors, can solve problems such as inapplicability of flexible devices

Active Publication Date: 2022-04-12
ZHONGSHAN DEHUA CHIP TECH CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the GaInAs / InP PIN photodetector chip technology uses the epitaxial layer and chip technology on the rigid InP substrate, which is not suitable for flexible devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of flexible planar detector pin chip and its manufacturing method and application
  • A kind of flexible planar detector pin chip and its manufacturing method and application
  • A kind of flexible planar detector pin chip and its manufacturing method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0076] In order to describe the technical content, achieved goals and effects of the present invention in detail, the following descriptions will be made in conjunction with the embodiments and accompanying drawings. The test methods used in the examples are conventional methods unless otherwise specified; the used materials, reagents, etc., are commercially available reagents and materials unless otherwise specified.

[0077] Embodiments of the present invention are: a flexible planar detector PIN chip and a preparation method thereof, comprising the following steps:

[0078] S1. A buffer layer (InP) is grown on the surface of the InP substrate, and the following layers are sequentially grown up from the buffer layer by MOCVD method: n-type InGaAs ohmic contact layer, n-type InP layer, InGaAs layer, p-type InP layer and p-type InGaAs ohmic contact layer, fabricated as figure 1 A prefab A as shown;

[0079] S2. Deposit SiO on the surface of the p-type InGaAs ohmic contact la...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a flexible planar detector PIN chip and its manufacturing method and application. The chip sequentially includes an N-face electrode, an epitaxial sheet and a P-face electrode from bottom to top; the epitaxial sheet is an n-type InGaAs ohmic contact layer, n-type InP layer, InGaAs layer, p-type InP layer and p-type InGaAs ohmic contact ring; the P-type InGaAs ohmic contact ring is provided with a diffusion hole area. The invention adopts a flexible chip technology to obtain a flexible planar detector PIN chip. The application scene is not limited to the conventional packaging form, and can be used in complex environments such as various curved surfaces and flexible devices.

Description

technical field [0001] The invention relates to the field of photodetectors, in particular to a flexible planar detector PIN chip and its manufacturing method and application. Background technique [0002] Metal-organic compound vapor phase epitaxy technology, referred to as MOCVD, is to use hydrogen carrier gas to send metal-organic compound vapor and non-metallic hydride into the heated substrate in the reaction chamber through multiple switches, and finally grow epitaxy on it through decomposition reaction. layers of advanced technology. Its growth process involves complex processes of fluid mechanics, gas phase and solid surface reaction kinetics and the combination of the two. Generally, its epitaxial growth is carried out under thermodynamic near-equilibrium conditions. [0003] Photodetectors are semiconductor devices that convert optical signals into electrical signals, and are used in optical fiber communications, computer networks, cable TV networks, and various ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/105H01L31/18H01L27/14H01L27/144
CPCH01L31/105H01L31/18H01L27/14H01L27/144Y02P70/50
Inventor 杜伟王兵黄嘉敬何键华杨文奕
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD