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Broadband impedance matching network using low-pass type broadband matching, second harmonic reflection phase shifting and high pass complex conjugate matching in combination

An impedance matching network and second harmonic technology, applied in the field of radio frequency (RF) circuits, can solve problems affecting device performance and performance degradation

Pending Publication Date: 2021-06-15
沃孚半导体公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The impedance matching network is frequency selective and introduces impedance dispersion with respect to frequency, resulting in band-limited power amplifier operation
Also, the harmonic impedance presented to the device significantly affects device performance, and dispersion can lead to performance degradation at certain frequency ranges

Method used

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  • Broadband impedance matching network using low-pass type broadband matching, second harmonic reflection phase shifting and high pass complex conjugate matching in combination
  • Broadband impedance matching network using low-pass type broadband matching, second harmonic reflection phase shifting and high pass complex conjugate matching in combination
  • Broadband impedance matching network using low-pass type broadband matching, second harmonic reflection phase shifting and high pass complex conjugate matching in combination

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Embodiment Construction

[0058] For purposes of simplicity and illustration, the present invention has been described primarily with reference to exemplary embodiments of the invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one of ordinary skill in the art that the present invention may be practiced without limitation to these specific details. In this specification, well-known methods and structures have not been described in detail so as not to unnecessarily obscure the invention.

[0059] Figure 1A depicted for power devices (M 1 ) input matching network (MN), such as a broadband RF amplifier. The device has a given input impedance (Z in ). exist Figure 1A where 'n' represents the harmonic number, i.e., '1' is the fundamental component, '2' is the second harmonic, and so on. The symbol 'ω' denotes the angular frequency involved in the design. The matching n...

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Abstract

The operative bandwidth of a broadband RF amplifier (M1) is improved by using a low-pass type broadband impedance transformer (LPMN), instead of a broadband matching network, in a multi-stage impedance matching network connected, e.g., to the amplifier input, the output, or both. The multi-stage impedance matching network comprises three stages connected in series. The first stage is a low- pass type broadband impedance transformer (LPMN, LPMN1) that provides broadband low reflection fundamental impedances and high reflection for the second harmonics. The second stage is a phase shifter that controls the location of the second harmonic reflection coefficient phases. The third stage is a high-pass input matching circuit (MN, MN1) that transforms the complex conjugate device input impedance to a real impedance. The three-stage impedance matching network provides the fundamental and harmonic frequency impedances for broadband operations, as well as controllability of the second harmonic reflection coefficient phases where the device performances are consistent across the intended bandwidth..

Description

[0001] related application [0002] This application is a continuation of U.S. Patent Application Serial No. 16 / 193,884, filed November 16, 2018, the entire disclosure of which is incorporated herein by reference. technical field [0003] This invention relates generally to radio frequency (RF) circuits, and more particularly to low-pass wideband impedance matching circuits for wideband RF amplifiers. Background technique [0004] Radio frequency (RF) power amplifiers are an important part of wireless communication circuits. High power RF amplifiers are especially important in wireless communication networks, such as, for example, base stations providing wireless transmissions over large geographical areas. In order to transmit greater volumes and types of content (eg, video), wireless communications operate over wider and wider frequency bands. [0005] Broadband power amplifiers have received much attention in this regard. Wideband power amplifiers can support high data...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H7/38H03F1/56
CPCH03H7/38H03H7/383H03F1/56H03F1/565H03F3/19H03H7/18H04B1/16H03F2200/222H03F2200/451
Inventor 张海东R·威尔逊B·赫尔曼Z·莫克蒂
Owner 沃孚半导体公司
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