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Preparation method of light-emitting diode epitaxial wafer

A technology of light-emitting diodes and epitaxial wafers, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc. Preparing patterns and other issues to achieve a stable preparation effect

Active Publication Date: 2021-06-18
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, after the epitaxial layer is transferred to a new substrate, it is easy to cause the new substrate to be damaged by impact
After the substrate is damaged by impact, it is difficult for the epitaxial layer and the new substrate to carry out the subsequent process of coating photoresist and preparing patterns, resulting in the scrapping of the epitaxial layer and the damaged substrate

Method used

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  • Preparation method of light-emitting diode epitaxial wafer
  • Preparation method of light-emitting diode epitaxial wafer
  • Preparation method of light-emitting diode epitaxial wafer

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Embodiment Construction

[0036] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.

[0037] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those having ordinary skill in the art to which the present disclosure belongs. "First", "second", "third" and similar words used in the specification and claims of this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components . Likewise, words like "a" or "one" do not denote a limitation in quantity, but indicate that there is at least one. Words such as "comprises" or "comprising" and similar terms mean that the elements or items listed before "comprising" or "comprising" include the elements or items listed after "comprising" or "comprising" a...

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Abstract

The invention provides a preparation method of a light-emitting diode epitaxial wafer, and belongs to the field of light-emitting diode manufacturing. The surface, away from an epitaxial layer, of a first substrate is connected with a second substrate, the first substrate is parallel to the second substrate, and the projection of the first substrate on the surface of the second substrate is located in the surface of the second substrate. The second substrate plays a role in supporting and positioning the first substrate and the epitaxial layer on the first substrate, the epitaxial layer can be stably coated with a photoresist, and the first substrate and the second substrate are placed on an exposure machine for subsequent exposure, development and other operations. Stable preparation of patterns on the epitaxial layer is achieved, the damaged first substrate and the epitaxial layer on the first substrate can continue preparation of the light-emitting diode epitaxial wafer, the first substrate and the epitaxial layer on the first substrate are not scrapped, waste is reduced, and the preparation success rate of the light-emitting diode epitaxial wafer produced in the same furnace is increased.

Description

technical field [0001] The disclosure relates to the field of light-emitting diode fabrication, in particular to a method for preparing a light-emitting diode epitaxial wafer. Background technique [0002] A light emitting diode is a semiconductor electronic component that emits light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, etc. Improving the luminous efficiency of chips is the goal that LEDs are constantly pursuing. [0003] The light-emitting diode epitaxial wafer is the primary product in the preparation process of the light-emitting diode, and the light-emitting diode epitaxial wafer at least includes a substrate and an epitaxial layer stacked on the substrate. During the preparation process of some light-emitting diode epitaxial wafers, it is necessary to go through the process of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/30H01L21/027
CPCH01L33/0066H01L33/0095H01L33/30H01L21/0274
Inventor 高百卉林晓文张炳伟
Owner HC SEMITEK SUZHOU