Unlock instant, AI-driven research and patent intelligence for your innovation.

Magnetron sputtering coating method and device

A magnetron sputtering coating and magnetic field technology, which is applied in sputtering coating, ion implantation coating, vacuum evaporation coating, etc., can solve the problem of thin film height, achieve high application value, improve quality, and achieve remarkable effects

Pending Publication Date: 2021-06-22
HUNAN KUANGCHU TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of high gas content in the sputtering coating film in the prior art, and propose a magnetron sputtering coating method and device to reduce the gas content in the obtained film and improve the quality of the film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetron sputtering coating method and device
  • Magnetron sputtering coating method and device
  • Magnetron sputtering coating method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Refer figure 1 , A magnetron sputtering coating method, including the following steps:

[0034] S1: The working gas is oscillated, and the target material and the substrate form a gas positive ion and gas negative ions;

[0035] S2: gas positive ion bombardment target, the target atom is separated from the target to the direction near the substrate;

[0036] S3: The isolation magnetic field is isolated from the air positive ions adjacent the substrate, reducing the air positive ions to the film when the surface of the substrate is formed.

[0037] S4: The target atom is deposited on a substrate.

Embodiment 2

[0039] Magnetron sputtering coating apparatus according to magnetron sputtering coating method, reference figure 2 The magnetron sputtering plating apparatus includes a coating tank 1, and the coating box 1 is arranged inserted parallel to carry the back plate 4 and a substrate carrier 10 of the target 5, the back plate 4 and the substrate carrier 10. Setting between isolation magnetic field generators 8, reference image 3 The isolation magnetic field generator 8 is configured to generate an isolation magnetic field, the back plate 4 to the cathode 2 of the electrode, the back plate 4 to provide a magnetic field 3 on the other side of the carrier target 5, the coating box 1. The air intake tube 7 to extract the coating box 1 into a vacuum state and an intake pipe 6 for the working gas intake air is argon.

[0040] When the coating is plated, the coating box 1 needs to be removed by vacuum, and then the working gas enters the coating box 1 from the intake pipe 6 to form a gas posit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a magnetron sputtering coating method and device. The magnetron sputtering coating method comprises the following steps of ionizing working gas, and forming gas positive ions and gas negative ions between target materials and a substrate; bombarding the target materials through the gas positive ions, so that target material atoms are separated from the target materials and moved towards the substrate; isolating air positive ions close to the substrate through an isolating magnetic field, so that the air positive ions are prevented from permeating into a film during film formation on the surface of the substrate; and depositing the target material atoms on the substrate. According to the magnetron sputtering coating method and device, the isolating magnetic field is arranged between the target materials and the substrate, and the gas positive ions can be blocked through the isolating magnetic field, and prevented from permeating into the film during film formation on the surface of the substrate; and the quality of the film is improved.

Description

Technical field [0001] The present invention relates to the field of coating equipment, and more particularly to a magnetron sputtering coating method and apparatus. Background technique [0002] The magnetron sputtering layer refers to the use of a coating material as a target cathode, and a target atom is sputtered to the workpiece to form a coating layer of the sample layer to form a deposited layer. The advantages of the magnetron sputtering film are: the film layer is strong; the membrane layer is dense, the corrosion resistance is good; with a surface coating resistance of the partial complicated parts; the film formation rate is high, the rate of evaporation coating Combining, a thick film can be plated. However, during the magnetron sputtering coating, since the substrate is reached, but the gas molecule is adsorbed on the surface of the film, the gas molecule can also penetrate into a certain depth in the film, so deposition The film is high in the film, affecting the ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35
CPCC23C14/351
Inventor 刘同春李又舟
Owner HUNAN KUANGCHU TECH CO LTD