Same-side twin local active memristor simulator

Abstract

The invention relates to a same-side twin local active memristor simulator. The simulator is composed of a small number of resistors, capacitors, multipliers and integrated operational amplifiers. The equivalent circuit is only provided with a closed-loop circuit, is a two-port equivalent analog circuit which only inputs voltage signals, and comprises a local active memristor state variable generation circuit and a local active memristor equivalent circuit. The invention designs the same-side twin local active memristor simulator which only comprises one integrated operational amplifier chip and three multiplier chips, is simple in structure and accurate in data, can replace an actual local active memristor to realize related circuit design, implementation and application, and is of great significance to electrical characteristic exploration and practical application research of a local active memristor.

Description

technical field [0001] The invention belongs to the technical field of circuit design, relates to a local active memristor emulator, in particular to the design and realization of a local active memristor two-port emulator with twin local active domains on the same side. Background technique [0002] Local active memristors can produce more complex and rich dynamic behaviors, and their unique local active regions are considered to be the origin of all complexity. It has broad application prospects. The study found that the behavior of neurons can be simulated by using local active memristors. Based on this, the researchers designed a Hodgkin-Huxley circuit model that simulates squid axons, which theoretically explains the mechanism of neural transmission. and brain science research are of great significance. [0003] Therefore, the study of locally active memristors and their properties will lay the necessary theoretical and practical foundations for practical applications...

AI Technical Summary

Problems solved by technology

Although a large number of memristor models have been proposed at present, the local active domains of the proposed local active memristors often only have a single local active domain or local active domains symmetrical about the origin, and these local active domains are all related to the input The voltage quantities have a one-to-one correspondence, and no model with multiple local active domains on the same side has ever been proposed. The local active memristor with multiple local active domains on the same side is characterized by the same input voltage corresponding to multiple local active domains. area, each segment of the local active area can be adjusted by state variables. Compared with other local active memristors, this kind of local active memristor has basically the same structural complexity, but the phenomenon it can produce is more complicated. more extensive

However, there are few studies on the memristor model with multi-segment local active domains on the same side, including mathematical and circuit modeling research on it.

Images