Preparation method of repeatable memory type stress film based on stress luminescent material
A stress luminescence and memory technology, applied in the field of stress luminescence materials, can solve the problems of poor repeatability, uneven powder dispersion, and low brightness, and achieve the effects of high stress luminescence brightness, high repeatability, and high sensitivity
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Embodiment 1
[0027] Embodiment 1: A preparation method of a repeatable memory stress film based on a stress luminescent material, the specific steps are as follows:
[0028] (1) High-purity CaCO 3 , Ga 2 O 3 、 Bi 2 O 3 and Tm 2 O 3 Grinding and mixing to obtain mixed powder A; taking the mole fraction of mixed powder A as 100%, CaCO in mixed powder A 3 30-35%, Ga 2 O 3 Accounted for 60-65%, Bi 2 O 3 1~5% and Tm 2 O 3 1~5%;
[0029] (2) Put the mixed powder A in step (1) at a temperature of 1200-1250°C in an oxidizing atmosphere for 10-12 hours, and grind it to obtain CaGa 2 O 4 : Bi 3+ ,Tm 3+ Stress luminescent powder; wherein the oxidizing atmosphere is air or O 2 / N 2 Mixed reducing atmosphere, in volume fraction, O 2 / N 2 O in mixed reducing atmosphere 2 90-95%;
[0030] (3) Step (2) CaGa 2 O 4 : Bi 3+ ,Tm 3+Stress luminescent powder and PMMA colloid are evenly mixed to obtain a mixed liquid, the mixed liquid is placed in a mold, and the colloid in the mold is ...
Embodiment 2
[0041] Embodiment 2: A preparation method of a repeatable memory stress film based on a stress luminescent material, the specific steps are as follows:
[0042] (1) High-purity CaCO 3 , Ga 2 O 3 , Bi 2 O 3 and Tm 2 O 3 Grinding and mixing to obtain mixed powder A; taking the mole fraction of mixed powder A as 100%, CaCO in mixed powder A 3 30-35%, Ga 2 O 3 Accounted for 60-65%, Bi 2 O 3 1~5% and Tm 2 O 3 1~5%;
[0043] (2) Put the mixed powder A in step (1) at a temperature of 1200-1250°C in an oxidizing atmosphere for 10-12 hours, and grind it to obtain CaGa 2 O 4 : Bi 3+ ,Tm 3+ Stress luminescent powder; wherein the oxidizing atmosphere is air or O 2 / N 2 Mixed reducing atmosphere, in volume fraction, O 2 / N 2 O in mixed reducing atmosphere 2 90-95%;
[0044] (3) Step (2) CaGa 2 O 4 : Bi 3+ ,Tm 3+ Stress luminescent powder and PMMA colloid are evenly mixed to obtain a mixed liquid, the mixed liquid is placed in a mold, and the colloid in the mold is...
Embodiment 3
[0055] Embodiment 3: A preparation method of a repeatable memory stress film based on a stress luminescent material, the specific steps are as follows:
[0056] (1) High-purity CaCO 3 , Ga 2 O 3 , Bi 2 O 3 and Tm 2 O 3 Grinding and mixing to obtain mixed powder A; taking the mole fraction of mixed powder A as 100%, CaCO in mixed powder A 3 30-35%, Ga 2 O 3 Accounted for 60-65%, Bi 2 O 3 1~5% and Tm 2 O 3 1~5%;
[0057] (2) Put the mixed powder A in step (1) at a temperature of 1200-1250°C in an oxidizing atmosphere for 10-12 hours, and grind it to obtain CaGa 2 O 4 : Bi 3+ ,Tm 3+ Stress luminescent powder; wherein the oxidizing atmosphere is air or O 2 / N 2 Mixed reducing atmosphere, in volume fraction, O 2 / N 2 O in mixed reducing atmosphere 2 90-95%;
[0058] (3) Step (2) CaGa 2 O 4 : Bi 3+ ,Tm 3+ Stress luminescent powder and PMMA colloid are evenly mixed to obtain a mixed liquid, the mixed liquid is placed in a mold, and the colloid in the mold is h...
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