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Preparation method of repeatable memory type stress film based on stress luminescent material

A stress luminescence and memory technology, applied in the field of stress luminescence materials, can solve the problems of poor repeatability, uneven powder dispersion, and low brightness, and achieve the effects of high stress luminescence brightness, high repeatability, and high sensitivity

Active Publication Date: 2021-07-09
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the application of the discovered stress luminescence material (CaAl 2 Si 2 o 8 :Eu 2+ , CaNb 2 o 7 :Pr 3+ etc.) have the following disadvantages: (1) the efficiency of converting the applied mechanical stimulus into light energy is low, and cannot effectively produce stress luminescence with high brightness, which greatly limits its accuracy in analyzing force applications; (2) After the stress luminescent material and colloid are mixed and packaged, the optical properties such as stress luminescence are seriously reduced, which has become a bottleneck in the field of coating film formation; (3) Since most of the traditional stress luminescent materials are fractal luminescent materials, stress luminescence is composed of Breakage of atomic and chemical bonds results in poor reproducibility and limits application potential
[0003] Therefore, there is an urgent need for a stable high-brightness, high-sensitivity, repeatable memory stress film to solve the problems of low brightness, uneven dispersion of powder in the colloid after packaging, and poor repeatability in traditional stress-luminescent materials.

Method used

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  • Preparation method of repeatable memory type stress film based on stress luminescent material
  • Preparation method of repeatable memory type stress film based on stress luminescent material
  • Preparation method of repeatable memory type stress film based on stress luminescent material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment 1: A preparation method of a repeatable memory stress film based on a stress luminescent material, the specific steps are as follows:

[0028] (1) High-purity CaCO 3 , Ga 2 O 3 、 Bi 2 O 3 and Tm 2 O 3 Grinding and mixing to obtain mixed powder A; taking the mole fraction of mixed powder A as 100%, CaCO in mixed powder A 3 30-35%, Ga 2 O 3 Accounted for 60-65%, Bi 2 O 3 1~5% and Tm 2 O 3 1~5%;

[0029] (2) Put the mixed powder A in step (1) at a temperature of 1200-1250°C in an oxidizing atmosphere for 10-12 hours, and grind it to obtain CaGa 2 O 4 : Bi 3+ ,Tm 3+ Stress luminescent powder; wherein the oxidizing atmosphere is air or O 2 / N 2 Mixed reducing atmosphere, in volume fraction, O 2 / N 2 O in mixed reducing atmosphere 2 90-95%;

[0030] (3) Step (2) CaGa 2 O 4 : Bi 3+ ,Tm 3+Stress luminescent powder and PMMA colloid are evenly mixed to obtain a mixed liquid, the mixed liquid is placed in a mold, and the colloid in the mold is ...

Embodiment 2

[0041] Embodiment 2: A preparation method of a repeatable memory stress film based on a stress luminescent material, the specific steps are as follows:

[0042] (1) High-purity CaCO 3 , Ga 2 O 3 , Bi 2 O 3 and Tm 2 O 3 Grinding and mixing to obtain mixed powder A; taking the mole fraction of mixed powder A as 100%, CaCO in mixed powder A 3 30-35%, Ga 2 O 3 Accounted for 60-65%, Bi 2 O 3 1~5% and Tm 2 O 3 1~5%;

[0043] (2) Put the mixed powder A in step (1) at a temperature of 1200-1250°C in an oxidizing atmosphere for 10-12 hours, and grind it to obtain CaGa 2 O 4 : Bi 3+ ,Tm 3+ Stress luminescent powder; wherein the oxidizing atmosphere is air or O 2 / N 2 Mixed reducing atmosphere, in volume fraction, O 2 / N 2 O in mixed reducing atmosphere 2 90-95%;

[0044] (3) Step (2) CaGa 2 O 4 : Bi 3+ ,Tm 3+ Stress luminescent powder and PMMA colloid are evenly mixed to obtain a mixed liquid, the mixed liquid is placed in a mold, and the colloid in the mold is...

Embodiment 3

[0055] Embodiment 3: A preparation method of a repeatable memory stress film based on a stress luminescent material, the specific steps are as follows:

[0056] (1) High-purity CaCO 3 , Ga 2 O 3 , Bi 2 O 3 and Tm 2 O 3 Grinding and mixing to obtain mixed powder A; taking the mole fraction of mixed powder A as 100%, CaCO in mixed powder A 3 30-35%, Ga 2 O 3 Accounted for 60-65%, Bi 2 O 3 1~5% and Tm 2 O 3 1~5%;

[0057] (2) Put the mixed powder A in step (1) at a temperature of 1200-1250°C in an oxidizing atmosphere for 10-12 hours, and grind it to obtain CaGa 2 O 4 : Bi 3+ ,Tm 3+ Stress luminescent powder; wherein the oxidizing atmosphere is air or O 2 / N 2 Mixed reducing atmosphere, in volume fraction, O 2 / N 2 O in mixed reducing atmosphere 2 90-95%;

[0058] (3) Step (2) CaGa 2 O 4 : Bi 3+ ,Tm 3+ Stress luminescent powder and PMMA colloid are evenly mixed to obtain a mixed liquid, the mixed liquid is placed in a mold, and the colloid in the mold is h...

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Abstract

The invention relates to a preparation method of a repeatable memory type stress film based on a stress luminescent material, and belongs to the technical field of stress luminescent materials. The preparation method comprises the following steps: grinding and uniformly mixing high-purity CaCO3, Ga2O3, Bi2O3 and Tm2O3 to obtain mixed powder A; placing the mixed powder A at the temperature of 1200-1250 DEG C, performing high-temperature sintering for 10-12 hours in an oxidizing atmosphere, and grinding to obtain CaGa2O4: Bi < 3 + >, Tm < 3 + > stress luminescent powder; then uniformly mixing CaGa2O4: Bi < 3 + >, Tm < 3 + > stress luminescent powder with PMMA colloid to obtain mixed liquid, putting the mixed liquid into a mold, coating the mixed liquid with a preservative film, and heating and curing the colloid in the mold to obtain the repeatable memory type stress film. The repeatable memory type stress film disclosed by the invention has relatively high stress luminous intensity, can keep the original stress luminous intensity in a long-term repeated use process, and can record the trace of each time of force application in real time; the stress film has the characteristics of high stress luminescence brightness, high stability, high sensitivity, repeatability and the like.

Description

technical field [0001] The invention relates to a method for preparing a repeatable memory stress film based on a stress luminescent material, and belongs to the technical field of stress luminescent materials. Background technique [0002] Stress-luminescent materials are characterized by mechanically stimulated photons, which are crucial for applications in medical health diagnosis, biomechanical sensing, flaw detection of building structures, and activation of light sources. At present, the application of the discovered stress luminescence material (CaAl 2 Si 2 O 8 :Eu 2+ , CaNb 2 O 7 :Pr 3+ etc.) have the following disadvantages: (1) the efficiency of converting the applied mechanical stimulus into light energy is low, and cannot effectively produce stress luminescence with high brightness, which greatly limits its accuracy in analyzing force applications; (2) After the stress luminescent material and colloid are mixed and packaged, the optical properties such as ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08L33/12C08K3/22
CPCC08J5/18C08J2333/12C08K3/22
Inventor 徐旭辉吕鸿宇刘志超吴涛余雪邱建备
Owner KUNMING UNIV OF SCI & TECH