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Preparation method of silicon carbide crystal

A silicon carbide and silicon carbide seed technology, which is applied in the field of silicon carbide crystal preparation, can solve the problems of crystal growth defects, reduced crystal quality and yield, and unfavorable crystal stable growth.

Active Publication Date: 2021-07-09
眉山天乐半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When growing large-sized crystals, large radial temperature gradients can cause crystal growth defects, reducing crystal quality and yield
In addition, due to the large radial temperature gradient in the material coverage area, the molar ratio of the sublimated gas phase components is uneven in the radial direction, which is not conducive to the stable growth of crystals.

Method used

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  • Preparation method of silicon carbide crystal
  • Preparation method of silicon carbide crystal
  • Preparation method of silicon carbide crystal

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Embodiment Construction

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings that need to be used in the description of the embodiments. Obviously, the accompanying drawings in the following description are only some examples or embodiments of the present application, and those skilled in the art can also apply the present application to other similar scenarios. Unless otherwise apparent from context or otherwise indicated, like reference numerals in the figures represent like structures or operations. It should be understood that the drawings are for purposes of illustration and description only, and are not intended to limit the scope of the application. It should be understood that the drawings are not drawn to scale.

[0036] It should be understood that, for the convenience of describing the present application, the terms "center", "upper surface", "lower surface", "upper", "lower", "top"...

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Abstract

The invention provides a preparation method of a silicon carbide crystal. The method comprises the following steps: placing a silicon carbide seed crystal at the top of a growth cavity; mounting a heating unit in the heating assembly into the growth cavity, and arranging at least part of the source material on the upper surface of at least part of the heating unit, wherein the heating unit comprises at least one circulation channel, and the at least one circulation channel penetrates through the heating unit; growing silicon carbide crystals in the growth cavity, wherein the radial temperature difference in the growth cavity does not exceed a first preset range of the growth temperature of the silicon carbide crystals when the silicon carbide crystals grow.

Description

[0001] priority statement [0002] This application claims the priority of Chinese application number 2020103733298 filed on May 06, 2020, the entire contents of which are incorporated herein by reference. technical field [0003] The present application relates to the field of crystal preparation, in particular to a method for preparing silicon carbide crystals. Background technique [0004] Silicon carbide single crystal has excellent physical and chemical properties, so it has become an important material for manufacturing high-frequency and high-power devices. Physical vapor transport (Physical Vapor Transport, PVT) is a method for preparing semiconductor crystals. The material is decomposed and sublimated into gas phase components under high temperature conditions, and the gas phase components are transported to the seed crystal in the low temperature area driven by the axial temperature gradient, and are deposited on the surface of the seed crystal to form crystals. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/36G01J5/00
CPCC30B23/002C30B29/36G01J5/00
Inventor 王宇杨田梁振兴
Owner 眉山天乐半导体材料有限公司