Three-dimensional memory device
A three-dimensional storage and device technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problem of high cost
Active Publication Date: 2021-07-09
YANGTZE MEMORY TECH CO LTD
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- Application Information
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Problems solved by technology
However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and costly
As a result, storage densities for planar memory cells approach the upper limit
Method used
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[0025] While specific configurations and arrangements are discussed, it should be understood that this is done for illustration purposes only. A person skilled in the relevant art will recognize that other configurations and arrangements may be used without departing from the spirit and scope of the present disclosure. It will be apparent to those skilled in the relevant art that the present disclosure may also be used in various other applications.
[0026] It should be noted that references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," "some embodiments," etc. indicate that the described embodiments may include a particular feature, structure, or characteristic. , but each embodiment may not necessarily include the specific feature, structure or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure or characteristic is described in conjunction with ...
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Abstract
Embodiments of a 3D memory devices and a method for forming the same are disclosed. In one embodiment, the 3D memory device includes: a substrate; a peripheral circuit over the substrate; a memory stack layer over the peripheral circuit including interleaved conductive layers and dielectric layers; a plurality of channel structures each vertically extending through the memory stack layer; a conductive layer in contact with upper ends of the plurality of channel structures; a first source contact over the memory stack layer and electrically connected to the plurality of channel structures; and a second source contact over the memory stack layer and electrically connected to the plurality of channel structures.
Description
[0001] This application is a divisional application of a Chinese patent application with an application date of July 7, 2020, an application number of 202080001422.4, and an invention title of "three-dimensional storage device". [0002] Cross References to Related Applications [0003] This application claims the benefit of priority to: International Application No. PCT / CN2020 / 092499, filed May 27, 2020, entitled "THREE-DIMENSIONAL MEMORY DEVICES", filed May 27, 2020 International Application No. PCT / CN2020 / 092501 entitled "METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICES", International Application No. PCT / CN2020 / 092504 filed on May 27, 2020 entitled "THREE-DIMENSIONAL MEMORY DEVICES" , International Application No.PCT / CN2020 / 092506, filed on May 27, 2020, entitled "METHODSFOR FORMING THREE-DIMENSIONAL MEMORY DEVICES", and filed on May 27, 2020, entitled "THREE-DIMENSIONAL MEMORY DEVICES" International Application No.PCT / CN2020 / 092512, and International Application No.PCT...
Claims
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IPC IPC(8): H01L27/1157H01L27/11582H01L27/11575H01L27/11524H01L27/11556H01L27/11548H10B43/20H10B43/35H10B41/27H10B41/35H10B41/40H10B41/50H10B43/27H10B43/40H10B43/50
CPCH10B41/27H10B41/35H10B41/50H10B43/27H10B43/35H10B43/50H10B41/40H10B43/40G11C16/0483H01L24/08H01L24/80H01L25/18H01L2224/02372H01L2224/08145H01L2224/09181H01L2224/80357H01L2224/80895H01L2224/80896H01L2224/9202H01L2225/06541H01L2924/00014H01L2224/80001H01L2224/03H01L21/823475H01L25/0657H10B43/20G11C16/14H01L25/50H01L2924/1431H01L2924/14511
Inventor 张坤
Owner YANGTZE MEMORY TECH CO LTD