High-voltage rapid silicon carbide diode and production method thereof

Abstract

The invention provides a high-voltage rapid silicon carbide diode and a production method thereof. The silicon carbide diode comprises a plastic package housing, a silicon carbide chip, a cathode pin, an anode pin, and a soldering-aid plate. The silicon carbide chip comprises an N + silicon carbide substrate, an N-silicon carbide epitaxial layer, cathode metal, a silicon dioxide layer, a P-type protection ring and anode metal covering the silicon dioxide layer and the upper end of the N-silicon carbide epitaxial layer, the anode metal is welded to the anode pin, one end of the soldering-aid plate is welded to the cathode pin, and the other end of the soldering-aid plate is welded with the cathode metal. According to the silicon carbide diode and the production method thereof, the silicon dioxide layer is grown on the outer side surface of the junction of the N + silicon carbide substrate and the N-silicon carbide epitaxial layer, and the anode metal layer is deposited at the upper ends of the silicon dioxide layer and the N-silicon carbide epitaxial layer, so that in the formed structure, a Schottky barrier area is large, and the voltage capable of passing through the diode under the forward direction of the silicon carbide diode is large, and the conduction speed is high.

Description

technical field [0001] The invention relates to the technical field of Schottky rectifier tubes, in particular to a high-voltage and fast silicon carbide diode and a production method thereof. Background technique [0002] Silicon carbide materials have the characteristics of wide band gap, high breakdown field strength, high thermal conductivity, high saturation electron mobility and excellent physical and chemical stability, and are suitable for working in high temperature, high frequency, high power and extreme environments, so Some diodes are made of silicon carbide diodes using silicon carbide materials instead of traditional silicon materials. [0003] Traditional silicon carbide diodes usually set the silicon dioxide layer at N - The upper end of the silicon carbide epitaxial layer, and then the anode metal is deposited on the inner side of the silicon dioxide layer, resulting in anode metal and N - The area of ​​the Schottky barrier formed between the silicon carbi...

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Problems solved by technology

[0003] Traditional silicon carbide diodes usually set the silicon dioxide layer at N - The upper end of the silicon carbide epitaxial layer, and then the anode metal is deposited on the inner side of the silicon dioxide layer, resulting in anode metal and N - The area of ​​the Schottky barrier formed between the silicon carbide epitaxial layers is small, so that the forward conduction voltage of the silicon carbide diode is low, and the conduction speed is slow. For some high-voltage and fast circuits, the conditions cannot be met.

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