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Preparation method of W18O49/g-C3N4/RGO semiconductor photocatalyst

A photocatalyst, g-c3n4 technology, applied in catalyst activation/preparation, physical/chemical process catalysts, chemical instruments and methods, etc., can solve the problems of high valence band energy photoinduced electron recombination, inability to meet and other problems, and achieve excellent photocatalysis performance, improved utilization, good dispersion effect

Inactive Publication Date: 2021-07-20
SHENYANG INSTITUTE OF CHEMICAL TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the relatively high valence band energy and fast photo-induced electron recombination, it still cannot meet the requirements we currently need

Method used

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  • Preparation method of W18O49/g-C3N4/RGO semiconductor photocatalyst

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Experimental program
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Effect test

Embodiment 1

[0019] (1) Graphene oxide was prepared by optimizing the Hummers method. Firstly, graphite flakes are oxidized by strong acid and strong oxidant, and graphite oxide with a higher degree of oxidation is prepared by controlling the addition method of oxidant, reaction temperature and other factors during the reaction process. Then, in aqueous solution, graphite oxide was exfoliated by ultrasonic action to prepare a monodisperse graphene oxide solution (1 mg / mL).

[0020] (2) Weigh 200mg of g-C 3 N 4 Dissolve in 50 mL deionized water and add 0.5 mL of graphene oxide solution (sonicated for 30 min) and 100 mg of W 18 o 49 , transfer the solution to a Teflon liner at 160 o C under the condition of hydrothermal reaction for 6 hours. Naturally cool to room temperature after completion of the reaction, and the resulting product is washed 3-5 times successively with deionized water and absolute ethanol, and at 50 o Dry at C for 12h to obtain W 18 o 49 / g -C 3 N 4 / RGO.

Embodiment 2

[0022] As described in Example 1, the difference is that the amount of graphene oxide solution added in step (2) is adjusted to 1 mL, and the final catalyst is W 18 o 49 / g -C 3 N 4 / 0.5wt%RGO.

Embodiment 3

[0024] As described in Example 1, the difference is that the amount of graphene oxide solution added in step (2) is adjusted to 1.5 mL, then the final catalyst is W 18 o 49 / g -C 3 N 4 / 1.0wt%RGO.

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Abstract

The invention discloses a preparation method of a W18O49 / g-C3N4 / RGO semiconductor photocatalyst, and relates to a preparation method of a photocatalyst; the photocatalyst is prepared by adopting a metal ion doped semiconductor capable of enhancing visible light photocatalytic activity; by taking g-C3N4 as a reference, W18O49 and oxidized graphene react under a hydrothermal condition according to a certain molar ratio to obtain the target photocatalyst. The visible light photocatalyst is clear in structure and definite in composition, and the visible light spectrum response range of g-C3N4 can be remarkably enlarged by doping W18O49, so that the diffusion range of photo-generated carriers can be enlarged after the W18O49 is compounded with graphene, recombination of photo-generated electron-hole pairs is inhibited, and therefore the visible light catalytic degradation activity is enhanced; in conclusion, the photocatalyst is a promising visible light photocatalytic material.

Description

technical field [0001] The present invention relates to a kind of photocatalyst preparation method, particularly relate to a kind of W 18 o 49 / g -C 3 N 4 / RGO semiconductor photocatalyst preparation method. Background technique [0002] With the continuous progress and development of society, the cleanliness of the environment is the goal that people pursue, so the organic pollutants in the environment must be effectively degraded. However, how to design a reasonable and effective photocatalyst is the key to the degradation of organic pollutants. In order to achieve high-efficiency photodegradation, a large number of semiconductor photocatalysts for degradation have been developed. Including TiO 2 Traditional photocatalysts including other oxide semiconductors can no longer meet the requirements of high-efficiency degradation. Therefore, one of the most critical challenges in this field is to develop an efficient visible-light active photocatalyst. [0003] In recen...

Claims

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Application Information

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IPC IPC(8): B01J27/24B01J37/10C01B32/198C01B32/194C02F1/30
CPCB01J27/24B01J37/10C01B32/198C01B32/194C02F1/30C02F2305/10C02F2101/308B01J35/39
Inventor 徐振和王立冬王欣欣王帅李欣倩袁熠阳
Owner SHENYANG INSTITUTE OF CHEMICAL TECHNOLOGY