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Deposition device for high-throughput preparation of SiBCN and method for high-throughput preparation of SiBCN

A deposition device, high-throughput technology, applied in the direction of coating, gaseous chemical plating, metal material coating process, etc., to achieve the effect of good quality, shortened coating deposition time, and good bonding

Active Publication Date: 2021-07-20
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no report on the high-throughput preparation of SiBCN coatings (thickness > 50 μm) by chemical vapor deposition in a short period of time and applied to the surface of the substrate as a coating.

Method used

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  • Deposition device for high-throughput preparation of SiBCN and method for high-throughput preparation of SiBCN
  • Deposition device for high-throughput preparation of SiBCN and method for high-throughput preparation of SiBCN
  • Deposition device for high-throughput preparation of SiBCN and method for high-throughput preparation of SiBCN

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] (1) Put the graphite sleeves with pipe diameters of 75mm, 80mm and 90mm into the corresponding holes on the circular plate, and block the redundant holes on the circular plate with graphite plates to prevent airflow from passing through;

[0048] (2) Cut the SiC fiber cloth into a size of 4mm×6mm, tie one end with a carbon rope, and tie the other end of the carbon rope to the support frame, and hang the sample at the center of the graphite sleeve;

[0049] (3) MTS and BCl are introduced into the reaction chamber 3 , NH 3 、H 2 , Ar. H 2 、CH 3 Cl 3 Si and BCl 3 After mixing, it is transported to the reaction chamber of the vertical reaction furnace through the first pipeline, and then the NH 3 It is transported to the reaction chamber through the second pipeline. NH 3 and BCl 3 The molar ratio is 1:1, BCl 3 The molar ratio with MTS is 2:3, Ar and BCl 3 The molar ratio of H is 5:2, H 2 The molar ratio to Ar is 2:5. The coating deposition temperature is 850° C...

Embodiment 2

[0051] (1) Put the graphite sleeves with pipe diameters of 75mm, 90mm and 95mm into the corresponding holes on the circular plate, and block the positions of the redundant holes on the circular plate with graphite plates to prevent the passage of airflow;

[0052] (2) Pre-polish the surface of the C / SiC material, and then process it into a size of 3mm×5mm×6mm, tie one end with a carbon rope, and tie the other end of the carbon rope to the support frame, and hang the sample at the center of the graphite sleeve;

[0053] (3) MTS and BCl are introduced into the reaction chamber 3 , NH 3 、H 2 , Ar. H 2 、CH 3 Cl 3 Si and BCl 3 After mixing, it is transported to the reaction chamber of the vertical reaction furnace through the first pipeline, and then the NH 3 It is transported to the reaction chamber through the second pipeline. NH 3 and BCl 3 The molar ratio is 2:1, BCl 3 The molar ratio of MTS and MTS is 3:1, Ar and BCl 3 The molar ratio of H is 5:4, H 2 The molar ra...

Embodiment 3

[0055] (1) Put graphite sleeves with pipe diameters of 75mm, 90mm, 95mm and 100mm into the corresponding holes on the circular plate, and block the redundant holes on the circular plate with graphite plates to prevent airflow from passing through;

[0056] (2) Polish the surface of the graphite strip in advance, and then process it into a size of 4mm×12mm×30mm, tie one end with a carbon rope, and tie the other end of the carbon rope to the support frame, and hang the sample at the center of the graphite sleeve;

[0057] (3) MTS and BCl are introduced into the reaction chamber 3 , NH 3 、H 2 , Ar. H 2 、CH 3 Cl 3 Si and BCl 3 After mixing, it is transported to the reaction chamber of the vertical reaction furnace through the first pipeline, and then the NH 3 It is transported to the reaction chamber through the second pipeline. NH 3 and BCl 3 The molar ratio of 1:1.5, BCl 3 The molar ratio of MTS and MTS is 1:10, Ar and BCl 3 The molar ratio of H is 5:4, H 2 The mola...

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Abstract

The invention relates to a deposition device for high-flux preparation of SiBCN and a method for high-flux preparation of SiBCN. The deposition device for high-flux preparation of SiBCN comprises a crucible body, a graphite plate and a graphite sleeve, wherein the graphite plate is used for covering the crucible body and comprises a plurality of first through holes, and the graphite sleeve is arranged in the first through holes of the graphite plate, is used for placing a base body and is provided with a flange at the top; wherein the crucible body is of a hollow structure; or the crucible body is of a solid structure, and a second through hole corresponding to the first through hole in the graphite plate is formed in the solid structure.

Description

technical field [0001] The invention relates to a high-throughput SiBCN deposition device and a high-throughput SiBCN preparation method. The SiBCN is mainly used on the surface of a material as a coating or a substrate to protect the material from oxidation in a high-temperature environment. Background technique [0002] Silicon boron carbon nitride (SiBCN) ceramics is a new type of structural ceramic material, which is a ceramic material with excellent high temperature resistance, creep resistance, oxidation resistance, thermal shock resistance and ablation resistance, and its oxidation resistance is excellent. than traditional SiC and Si 3 N 4 Ceramics, used as a coating can further increase the service temperature and service life of the material. In recent years, in the field of ceramic matrix composites, as the interface coating and matrix phase, more and more scholars pay attention and research. [0003] At present, the preparation methods of SiBCN ceramics mainly ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/58C04B35/622C04B35/80C04B35/84C23C16/36C23C16/455
CPCC04B35/58C04B35/62222C23C16/455C23C16/36C04B2235/465C04B2235/444C04B2235/483
Inventor 廖春景董绍明靳喜海倪德伟章龙龙林玲顾炎
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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