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Semiconductor wafer surface metallization method

A surface metal and semiconductor technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problem of fragile semiconductor wafers

Inactive Publication Date: 2021-07-20
SAE TECH DELEVOPMENT DONGGUAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The spraying and plating process makes the semiconductor material easy to solder, but if the thickness of the semiconductor is less than 1mm, when the nickel spraying process is performed before the plating, the semiconductor wafer is easily broken under the action of high temperature and high pressure nickel flow

Method used

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  • Semiconductor wafer surface metallization method

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Embodiment Construction

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0032] see figure 1 , which is a flowchart of an embodiment of the method for surface metallization of a semiconductor wafer provided by the present invention.

[0033] A method for surface metallization of a semiconductor wafer in a preferred embodiment of the present invention comprises:

[0034] Step S101, performing vacuum sputtering deposition on the semiconductor wafer, so that an aluminum layer is formed on the surface of the semiconductor wafer;

[0035] ...

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Abstract

The invention relates to the technical field of semiconductors, and discloses a semiconductor wafer surface metallization method. The method comprises the following steps of sputtering aluminum on the surface of a semiconductor wafer, alloying the aluminum on the surface of the semiconductor wafer and the semiconductor wafer to form an aluminum-silicon alloy layer, sputtering a nickel layer and a tin layer on the semiconductor wafer on which the aluminum-silicon alloy layer is formed, and finally, sputtering a conductive layer on the tin layer. Therefore, semiconductor wafer surface metallization is realized, and the problem that the semiconductor wafer is easy to break due to the fact that the semiconductor wafer surface metallization is realized through a spraying and electroplating process in the prior art is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for metallizing the surface of a semiconductor wafer. Background technique [0002] In recent years, under the impact of the fierce development of the international market industry, the competition in the semiconductor market has become fierce. As market competition continues to escalate, product cost and product reliability have become the main criteria for measuring product competitiveness. The metallization of the surface of the semiconductor wafer is a key process, which is usually completed by the electroplating process of spraying. The spraying and electroplating process makes the semiconductor material easy to solder, but if the thickness of the semiconductor is less than 1mm, when the nickel spraying process is performed before electroplating, the semiconductor wafer is easily broken under the action of high temperature and high pressure nickel flow. Co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/02C23C14/34C23C14/14C23C14/58C23C14/16
CPCC23C14/021C23C14/022C23C14/14C23C14/165C23C14/34C23C14/5846
Inventor 邓国安
Owner SAE TECH DELEVOPMENT DONGGUAN
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