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Millimeter wave terahertz frequency band extremely-low-loss dielectric film and surface metallization method

A dielectric thin film and terahertz technology, which is applied to waveguide devices, pattern surface photolithography, resonators, etc., can solve the problems of difficult control of oxygen elements, difficult high-precision circuit wires, and unstable device performance. Achieve the effect of low cost, low loss and convenient integration

Inactive Publication Date: 2021-04-09
RES INST OF MILLIMETER WAVE & TERAHERTZ TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the thickness of the copper foil used is relatively large, usually above 0.1mm, it is not easy to obtain high-precision circuit wires during subsequent chemical etching
At the same time, the oxygen element at the high-temperature reaction interface is difficult to control, and pores may appear between the copper foil and the ceramic, resulting in unstable device performance

Method used

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  • Millimeter wave terahertz frequency band extremely-low-loss dielectric film and surface metallization method
  • Millimeter wave terahertz frequency band extremely-low-loss dielectric film and surface metallization method
  • Millimeter wave terahertz frequency band extremely-low-loss dielectric film and surface metallization method

Examples

Experimental program
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Effect test

Embodiment 1

[0054]Example 1: The surface metallization of the new dielectric film forms a stable terahertz circuit.

[0055]Seefigure 1 It is a flow chart of the surface metallization of the new dielectric film of the present invention, which includes:

[0056]S1. The 100 micron thick cyclolene hydrocarbon copolymer film 1 is fixed to the silicon silicon plate 2 as the support layer.

[0057]S2. The magnetron sputtering method is directly deposited on the surface of the flexible cyclolene copolymer film 1 directly deposited a layer of 200 nanometers.

[0058]The positive photoresist 4 was spin coated with a spin coater on a gold film layer 4.

[0059]S4. After the soft baking process, the sample in step S3 is placed in the photolithography machine, and then the ultraviolet rays are irradiated in a specially designed hollow structural mask 5 (for engraving the desired metal pattern), the mask template Align with the silicon wafers below. The chemical properties of the ultraviolet radiation region 6 will gradua...

Embodiment 2

[0067]Example 2: Easy tortharhertz circuit formed by the surface metallization of the new dielectric film.

[0068]In order to further illustrate the surface metallization of the new cyclolene copolymer film, the chemical characteristics of the dielectric film (type, chemical resistance, temperature resistance characteristic, glass transition temperature, etc.), rough, rough, surface rough Degree, etc.), the idea of ​​the target circuit structure (metal species, metal thickness, circuit size accuracy, etc.) start, perform personalized setting and analysis, surface circuit metal can be realized. This example provides a case where the surface metal caused by one of the variables is unsuccessful.

[0069]Seefigure 1 It is a flow chart of the surface metallization of the new dielectric film, in addition to the updating step S2, the preparation steps S1 and S3-S9 in the first embodiment.

[0070]The updated step S2 is: a layer of 300 nm thick metal gold film is deposited on the surface of the fle...

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Abstract

The invention discloses a millimeter wave terahertz frequency band extremely-low-loss dielectric film and a surface metallization method. According to the dielectric film, a flexible cycloolefin copolymer film (1) serves as a substrate, a silicon wafer (2) serving as a supporting layer is arranged below the flexible cycloolefin copolymer film (1), a metal layer (3) is arranged on the flexible cycloolefin copolymer film (1), and the flexible cycloolefin copolymer film (1) belongs to cycloolefin copolymers. The dielectric film has extremely low dielectric loss in a millimeter wave terahertz frequency band, a stable and reliable metallized terahertz circuit structure is formed on the surface of the dielectric film, and a millimeter wave terahertz circuit based on the cycloolefin copolymer dielectric film is realized. The millimeter wave terahertz circuit based on the cycloolefin copolymer novel dielectric film is realized, and the millimeter wave terahertz circuit has important significance for application of the novel dielectric film in millimeter wave terahertz.

Description

Technical field[0001]The present invention relates to a surface metallization method of a novel dielectric film, and more particularly to a surface metallization method having a very low loss new type dielectric film in a millimeter wave hem.Background technique[0002]The development of the Tharaz source and the terahertz detection technique makes the demand for the terahertz detection equipment in imaging and sensing applications in society. It is well known that the performance of the terahertz devices is closely related to the media substrate used. However, studies have shown that oxygen, water and other gases have a strong attenuation of the terahertz signal, resulting in an increase in dielectric loss in the terahertz band. The media loss under the terahertz band is considered to be one of the challenges of Taihaz Technology Development.[0003]Therefore, there is now a large number of research attempts to apply various media substrates to devices designed in the terahertz domain,...

Claims

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Application Information

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IPC IPC(8): H01P7/10H01P11/00G03F1/00G03F7/16G03F7/20G03F7/38
CPCH01P7/10H01P11/008G03F7/162G03F7/168G03F7/2004G03F7/38G03F1/00C09D123/0823C08L2203/16
Inventor 蔡龙珠洪伟蒋之浩陈晖
Owner RES INST OF MILLIMETER WAVE & TERAHERTZ TECH
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