Solar cell n-type doped region grid line structure and preparation method thereof, and solar cell
A technology of solar cells and doped regions, applied in the field of solar cells, can solve the problems of difficult cost reduction of cells, high price of silver paste, large contact resistance, etc., to reduce the shading area on the back, increase the photoelectric conversion efficiency, and reduce the line width Effect
Pending Publication Date: 2021-07-20
NANTONG TIANSHENG NEW ENERGY TECH CO LTD
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Problems solved by technology
The silver paste is used as the gold half-ohm contact area formed by the fine grid and the n-type doped region. The contact resistance is high, and the high contact recombination limits the further improvement of the battery efficiency. At the same time, the price of the silver paste of the fine grid paste is high, making it difficult to reduce the cost of the battery.
Method used
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[0029] In order to enable those skilled in the art to better understand the technical solution of the present disclosure, the present disclosure will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.
[0030] like figure 1 As shown, the embodiment of the present disclosure relates to a solar cell n-type doped region grid line structure, the n-type doped region grid line structure includes a solar cell n-type doped region passivation layer / anti-reflection layer 1 The fine grid lines include a plurality of aluminum paste fine grids 2 , a plurality of silver paste fine grids 3 and a plurality of contact holes (not shown in the figure). The contact holes are arranged on the passivation layer / anti-reflection layer 1 of the n-type doped region of the solar cell, and the silver paste fine grids 3 cover the corresponding contact holes. The aluminum paste fine grids 2 are electrically connected between at least two adjacent si...
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Abstract
The invention provides an n-type doped region grid line structure of a solar cell, a preparation method of the n-type doped region grid line structure and the solar cell. The n-type doped region grid line structure comprises a fine grid line arranged on a solar cell n-type doped region passivation layer / antireflection layer. The fine grid line comprises a plurality of silver paste fine grids, a plurality of aluminum paste fine grids and a plurality of contact holes. The contact holes are formed in the n-type doped region passivation layer / antireflection layer of the solar cell, and the silver paste fine grids cover the corresponding contact holes, wherein an aluminum paste fine grid is electrically connected between at least two adjacent silver paste fine grids in the plurality of silver paste fine grids. According to the solar cell n-type doped region grid line structure disclosed by the invention, the aluminum paste fine grid is electrically connected between the at least two adjacent silver paste fine grids, so that the problem of silver-aluminum interpenetration in the sintering process of the silver paste and the aluminum paste can be effectively solved, metal recombination is reduced, the contact resistance is reduced, and the photoelectric conversion efficiency of the solar cell is improved.
Description
technical field [0001] The disclosure belongs to the technical field of solar cells, and in particular relates to a solar cell n-type doped region grid line structure, a preparation method thereof, and a solar cell. Background technique [0002] Photovoltaic power generation is one of the main ways to use solar energy at present. Because of its cleanness, safety, convenience, and high efficiency, solar photovoltaic power generation has become an emerging industry that is generally concerned and focused on development by countries all over the world. Therefore, in-depth research and utilization of solar energy resources is of great significance to alleviate the resource crisis and improve the ecological environment. [0003] The n-type doped region of solar cells usually uses silver paste as the fine grid metal electrode to complete the collection of photo-generated current on the cell substrate, and the fine grid electrode is connected to the main grid line formed by the sil...
Claims
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Login to View More IPC IPC(8): H01L31/0224
CPCH01L31/022425Y02E10/50
Inventor 毛平秦梦飞赵新杨贵忠沈琴
Owner NANTONG TIANSHENG NEW ENERGY TECH CO LTD