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Metallization method and solar cell

A metallization and stacking metal technology, applied in the direction of circuits, electrical components, photovoltaic power generation, etc., can solve the problems of insufficient micro-scale uniformity, insufficient purity of metal aluminum and silver, and affecting the macroscopic performance of aluminum and silver, etc., to achieve Good interface matching, good ohmic contact performance, and low metal recombination effect

Active Publication Date: 2022-03-15
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The material formed by this preparation process is still not sufficiently homogeneous at the microscopic scale, which affects the macroscopic performance of aluminum and silver as interconnect metal materials (including the effect of aluminum on doping)
Second, the purity of metal aluminum and silver in the slurry is not high enough, and other impurities will inevitably be introduced during the preparation of the slurry, which will inevitably affect the quality of the p-type doped junction formed by aluminum in silicon, and give the silicon substrate Bring surface and body recombination caused by various impurities, and affect metallization performance
Since silver does not contribute substantially to achieving an ohmic contact to a p-doped junction, this can instead increase unwanted metal recombination
Moreover, the purpose of adding silicon powder to the silver-aluminum paste is to effectively suppress and prevent the aluminum wedge effect and the aluminum-silicon void effect; but due to the addition of silver, it will also affect the interaction between aluminum and silicon to a certain extent (aluminum-silicon Alloy), which affects the effect of adding silicon powder

Method used

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  • Metallization method and solar cell
  • Metallization method and solar cell
  • Metallization method and solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Example 1 (Al-Si / Ag deposited by magnetron sputtering)

[0029] A1: Select sufficiently high-purity aluminum, silicon, and silver as targets, among which, the weight purity of Al is ≥99.999%, the weight purity of Si is ≥99.99%, and the weight purity of Ag is ≥99.99%.

[0030] A2: Place the silicon wafer and the sputtering target (aluminum, silicon and silver) to be coated on the base sample stage and the sputtering target in the sputtering coating equipment respectively, wherein the ratio of aluminum to silicon is 85wt.% Al and 15wt.% Si. The working area of ​​the sputtering coating equipment is filled with high-purity argon (99.999%) as the sputtering gas.

[0031] A3: Turn on the vacuum pumps at all levels of the sputtering coating equipment, and vacuum through the vacuum pumps at all levels to make the background vacuum of the coating chamber reach 6 10 -5 Pa to meet the sputtering process conditions.

[0032] A4: Heat the temperature of the substrate sample stag...

Embodiment 2

[0035] Example 2 (Electron beam evaporation deposition of Al-Si / Ag)

[0036] B1: Select sufficiently high-purity aluminum, silicon and silver as evaporation materials, wherein the weight purity of Al is ≥99.995%, the weight purity of Si is ≥99.99%, and the weight purity of Ag is ≥99.99%.

[0037] B2: Open the door of the coating chamber, place the silicon wafer on the evaporating workpiece tray, put aluminum, silicon and silver in the evaporating crucible, and the ratio of aluminum to silicon is 88wt.% Al and 12wt.% Si, close the coating chamber Door.

[0038] B3: Turn on the vacuum pumps at all levels of the evaporation coating equipment, and vacuum through the vacuum pumps at all levels to make the background vacuum of the coating chamber reach 1·10 -3 Pa to meet the evaporation process conditions.

[0039] B4: Heat the temperature of the evaporation workpiece tray to 300-400°C, and keep the temperature constant for 2 minutes.

[0040] B5: E-beam evaporation coating: fir...

Embodiment 3

[0054] Example 3 discloses a preparation method for applying the Al-Si / Ag stacked metallization technology described in the present invention to a p-type PERC battery. The battery structure given in this example is as follows figure 2 shown. The specific battery preparation process is as follows.

[0055] C1: Select a 156mm*156mm (100) p-type monocrystalline silicon wafer with a resistivity of 1 Ω·cm.

[0056] C2: using an alkali texturing method to prepare a texturized surface with a random pyramid shape on the surface of the p-type silicon wafer. The process conditions are as follows: Potassium hydroxide with a mass concentration of 2-3% is used, the temperature is 70-75°C, and the texturing time is 5-7 minutes.

[0057] C3: A uniform n-type emitter junction is prepared on the front side of the p-type silicon wafer by the method of phosphorus oxychloride furnace tube diffusion, and the phosphorus surface doping concentration is 1.10 20 cm -3 , the sheet resistance is 9...

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Abstract

The invention provides a new metallization method, which mainly prepares an aluminum-silicon / silver laminated metal structure through physical vapor deposition combined with annealing heat treatment. The aluminum-silicon / silver stacked metal structure can be applied to high-efficiency batteries such as p-type or n-type PERC, PERT, PERL batteries, TOPCon batteries, and IBC batteries to achieve p-type (aluminum) doping of silicon materials and Metallization of p-type doped junctions (including formation of ohmic contacts and conductive interconnects). In aluminum-silicon / silver stacked metal, aluminum is used to complete p-type doping or form the ohmic contact of p-type doped junction, and silver is used to enhance the interconnection conductance and also increase the reflectivity of the stacked metal, while adding A certain amount of silicon is used to suppress and prevent the aluminum wedge effect and the aluminum-silicon void effect.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon solar cells, and in particular relates to a method for preparing an aluminum-silicon / silver laminated metal and a solar cell with an aluminum-silicon / silver laminated metal structure. Background technique [0002] Photovoltaic power generation uses the photoelectric effect of semiconductor materials to directly convert solar radiation energy into electrical energy. As a renewable energy source, photovoltaic power generation is not subject to environmental and geographical restrictions, can be sustainable, green and environmentally friendly, and can solve human energy crises and environmental problems, thus occupying an important strategic position in future energy development. Therefore, the development of high-efficiency, low-cost solar cells, components and systems is the key to promoting the stable, comprehensive and rapid development of the photovoltaic industry. Among all kinds o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/068
CPCH01L31/022425H01L31/068Y02E10/547
Inventor 黄海冰符黎明
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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