Check patentability & draft patents in minutes with Patsnap Eureka AI!

Central liquid supplying machining method for chemically and mechanically polished semiconductor material and device thereof

A technology of chemical machinery and processing methods, applied in grinding devices, metal processing equipment, grinding/polishing equipment, etc., can solve problems such as difficulty in dealing with semiconductor material accuracy and sub-surface damage, and achieve the effect of avoiding uneven force

Pending Publication Date: 2021-07-27
TIANJIN UNIV
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional mechanical force controlled polishing method is still difficult to cope with the precision and subsurface damage requirements of semiconductor material preparation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Central liquid supplying machining method for chemically and mechanically polished semiconductor material and device thereof
  • Central liquid supplying machining method for chemically and mechanically polished semiconductor material and device thereof
  • Central liquid supplying machining method for chemically and mechanically polished semiconductor material and device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but the following embodiments in no way limit the present invention.

[0045] The invention proposes a processing method for chemical mechanical polishing of semiconductor materials with central liquid supply. The polishing tool rotates, the polishing tool and the semiconductor workpiece move with each other according to a certain trajectory, and the liquid between the polishing tool and the semiconductor workpiece is realized by controlling the pressure of the polishing liquid and the load of the polishing tool. Good control of the film; thus realizing the thinning of the semiconductor workpiece and the rough polishing of the surface, the semi-finish polishing of the surface of the semiconductor workpiece and the ultra-precision polishing of the surface of the semiconductor workpiece. The chemical mechanical polishing method includes a fixed abra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Diameteraaaaaaaaaa
Surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a central liquid supplying machining method for a chemically and mechanically polished semiconductor material. A polishing tool rotates, the polishing tool and a semiconductor workpiece move to each other according to a certain track, and a liquid membrane between the polishing tool and the semiconductor workpiece is controlled well by controlling a pressure of a polishing liquid and a load of the polishing tool. When a specific polishing process is adopted, a proper polishing pad provided by the invention is mounted on the polishing tool. After adopting a solidified abrasive center liquid supply polishing, the flatness of a wafer can reach micron dimension, the surface roughness can reach dozens of nanometers and sub-surface damage can reach micron level. By adopting small grinding head center liquid supply polishing, the flatness of the wafer is further improved, the surface roughness can reach nanoscale and the sub-surface damage is further reduced. By adopting disc type fluid dynamic polishing, the surface roughness of the wafer can reach submicron level, the sub-surface damage can reach submicron level, and sub-nano super-smooth surface machining is achieved, such that an ideal wafer is prepared.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a chemical mechanical grinding and polishing method based on a central liquid supply type, in particular to a serialized processing method for thinning and polishing semiconductor materials to obtain nano-scale ultra-smooth surfaces. Background technique [0002] Semiconductor materials have become an indispensable part of high-end chips by virtue of their excellent material properties. Aspects such as flatness, roughness, metal, and grain have a significant impact on semiconductor devices. With the rapid development of chip technology in the fields of life, industry, medical treatment, and national defense technology, the efficient and high-precision manufacturing process of semiconductor materials has become a core technical problem that needs to be broken through. [0003] At present, the mainstream manufacturing process of semiconductor wafers is still dominated by c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B1/00B24B57/02B24B37/10B24B37/24B24B37/34
CPCB24B1/00B24B37/10B24B37/24B24B37/34B24B57/02
Inventor 林彬吕秉锐曹中臣姜向敏
Owner TIANJIN UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More