Methods to reduce molybdenum content after chamber maintenance

A chamber and content technology, used in discharge tubes, climate sustainability, final product manufacturing, etc., can solve problems such as less than ideal, and achieve the effect of reducing cleaning times, improving manufacturing yield, and reducing energy consumption

Active Publication Date: 2022-07-05
HUA HONG SEMICON WUXI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the removal effects of Mo molybdenum elements in various methods of the prior art are not ideal.

Method used

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  • Methods to reduce molybdenum content after chamber maintenance
  • Methods to reduce molybdenum content after chamber maintenance
  • Methods to reduce molybdenum content after chamber maintenance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The method for reducing the molybdenum content after the maintenance of the chamber of Example 1 comprises the following steps:

[0025] S1, chamber maintenance;

[0026] Chamber maintenance mainly includes replacement of components and cleaning of the chamber.

[0027] like figure 2 As shown, chamber cleaning typically utilizes a method of injecting a process gas, such as injecting a first process gas. The first process gas is injected through an air inlet unit, and the air inlet unit is located in the middle position of the top of the cavity. The flow rate of the first process gas can be controlled between 100 sccm and 1000 sccm. The first process gas is ionized to form a plasma before being passed through. The first process gas may be a gas that meets preset process requirements, such as a gas containing elements such as oxygen and fluorine, which is not limited here. At the same time, the reacted gas is discharged through the exhaust unit. This cleaning proce...

Embodiment 2

[0037] Embodiment 2 The method for reducing molybdenum content after chamber maintenance comprises the following steps:

[0038] S1, chamber maintenance;

[0039] Same as Example 1.

[0040] S2, chamber molybdenum content detection;

[0041] Same as Example 1.

[0042] S3, molybdenum element cleaning;

[0043] The number of PE-TEOS wafers placed in this step is obtained by calculation. Other methods are the same as in Example 1.

[0044] The calculation of the number of PE-TEOS wafers placed can be obtained according to the curve fitted by the experiment, such as image 3 . When the upper limit of the concentration requirement of molybdenum element is determined, the number of PE-TEOS wafers can be determined. For example, the upper limit of concentration is set to 0.4, the number of PE-TEOS wafers is 40pcs, the upper limit of concentration is set to 0.3, and the number of PE-TEOS wafers is 80pcs.

[0045] By using the above method, different numbers of PE-TEOS wafers ...

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PUM

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Abstract

The invention discloses a method for reducing molybdenum content after chamber maintenance, comprising step S1, chamber maintenance, wherein the chamber maintenance step at least includes a cleaning step, the cleaning step injects a first process gas, and discharges the first process gas. A process gas is used to reduce the content of metal impurity ions in the chamber, and the cleaning step is repeated for several times; step S2, the detection of the molybdenum content in the chamber is used to measure the content of molybdenum ions in the chamber; step S3, molybdenum element cleaning , in order to reduce the content of the molybdenum ions in the chamber.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for reducing molybdenum content after chamber maintenance. Background technique [0002] In the manufacturing process of semiconductor integrated circuits, various metal elements are introduced in many processes, whether it is ion implantation or etching, etc. These metal elements adhere to the inner wall surfaces of the chamber as by-products. When switching between different processes, maintenance of the chamber is required in order to rebuild the chamber environment for the next manufacturing process. Warm up and test after maintenance in preparation for the next manufacturing process. As mentioned in the publications CN108389809A, CN111952168A, CN210378986U. [0003] The metal ion content of the CIS chip used as an image sensor is an important parameter that affects the chip yield. Too high metal ion content will cause the CIS chip t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32862Y02P70/50
Inventor 贺学兵吴长明冯大贵王玉新余鹏童光辉张欢欢
Owner HUA HONG SEMICON WUXI LTD
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