Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

VCSEL chip and manufacturing method thereof

A manufacturing method and chip technology, applied to laser components, electrical components, lasers, etc., can solve the problems of limited contact area, lower frequency response, large impedance, etc., achieve good optical properties, reduce contact resistance, and reduce high-frequency impedance Effect

Inactive Publication Date: 2021-08-10
SHENZHEN DEMINGLI OPTOELECTRONICS CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the existing VCSEL chip manufacturing process, when manufacturing the VCSEL optical window ring electrode, the range of forming ohmic contact only occupies a part of the surface of the circular platform. Due to the limited contact area, the formed impedance is relatively large. When operating at high frequency, There will be problems of heat generation and lower frequency response

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • VCSEL chip and manufacturing method thereof
  • VCSEL chip and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] In order to make the purpose, technical solution and advantages of the present invention clearer, a VCSEL chip and a manufacturing method thereof of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0021] Please refer to Figure 1-Figure 2 , a VCSEL chip, including from bottom to top by undoped u-GaAS substrate 100, p-type electrode contact layer 110, p-DBR, MQW (Multiple Quantum Well), and n-DBR composition The epitaxial structure, and the first etching mesa 300 and the second etching mesa 400 formed by the epitaxial structure, also include the anti-reflection transparent conductive layer 500 and BCB200; the first etching mesa 300 is composed of n-DBR, MQW and downward beyond the MQW Extending to the formation of p-DBR etching, the seconda...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a VCSEL chip and a manufacturing method thereof. The VCSEL chip is characterized in that a transparent conductive material is tiled on the upper surface of a whole light window platform to form an anti-reflection transparent conductive layer to achieve a comprehensive contact effect, and then a required metal electrode is plated to achieve the purpose of reducing contact resistance, so that better optical properties are provided, high-frequency impedance is reduced, high-frequency characteristics are improved, the heat effect is reduced, and the reliability is improved.

Description

technical field [0001] The invention relates to the technical field of VCSEL chips, in particular to a VCSEL chip and a manufacturing method thereof. Background technique [0002] In the existing VCSEL chip manufacturing process, when manufacturing the VCSEL optical window ring electrode, the range of forming ohmic contact only occupies a part of the surface of the circular platform. Due to the limited contact area, the formed impedance is relatively large. When operating at high frequency, There will be problems of heat generation and lower frequency response. Contents of the invention [0003] In view of the above situation, it is necessary to propose a VCSEL chip and a manufacturing method thereof which can reduce the contact resistance of the light window. [0004] In order to solve the above-mentioned technical problems, the technical solution adopted by the present invention is: a VCSEL chip includes an epitaxial layer composed of an undoped u-GaAS substrate, a p-ty...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/042H01S5/183H01S5/187H01S5/34
CPCH01S5/0421H01S5/04256H01S5/18347H01S5/18361H01S5/187H01S5/34
Inventor 方照诒李承远
Owner SHENZHEN DEMINGLI OPTOELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com