Device for simultaneous growth of multiple silicon carbide single crystals

Abstract

The invention discloses a device for simultaneous growth of a plurality of silicon carbide single crystals. The device comprises a graphite crucible, an induction heating coil and a driving mechanism. The driving mechanism is located above the outside of the graphite crucible, the induction heating coil is located outside the graphite crucible, and the graphite crucible is cylindrical and comprises a main chamber located at the lower part and an auxiliary chamber located at the upper part. The bottom of the main chamber is filled with silicon carbide source powder. The auxiliary chamber comprises a first auxiliary material groove with the bottom filled with the silicon carbide source powder and a second auxiliary material groove with the bottom filled with halide auxiliary materials. Through the special design of the structure of the growth device, the corresponding requirements on the growth environment in the growth process of a plurality of silicon carbide single crystals are met, and a plurality of high-quality silicon carbide single crystals are obtained in the same batch, so that the growth efficiency of the current silicon carbide single crystals is remarkably improved.

Description

technical field [0001] The invention relates to the field of silicon carbide single crystal growth, in particular to a device capable of simultaneously growing multiple silicon carbide single crystals. Background technique [0002] As the concepts of green development and energy saving and emission reduction are deeply rooted in the hearts of the people, people's requirements for the performance indicators of power semiconductor devices are increasing day by day. The third-generation semiconductor materials represented by silicon carbide have been paid more and more attention to their development and promotion because of their high thermal conductivity, high critical breakdown electric field and many other unique advantages. At present, some leading countries and international large enterprises have invested in the research and development and production of the third-generation semiconductor silicon carbide. However, the current high price and low production efficiency have...

AI Technical Summary

Problems solved by technology

However, in the PVT method, the growth time is long and the growth conditions are harsh, but only one silicon carbide single crystal can be grown in one growth furnace, and the production efficiency is not high

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