Device for simultaneous growth of multiple silicon carbide single crystals

A silicon carbide single crystal, one-way valve technology, applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems of harsh growth conditions, low production efficiency, long growth time, etc., to achieve adjustment and Accurate and reliable control, precise and controllable effect of adjusting the growth atmosphere

Inactive Publication Date: 2021-08-13
中科汇通(内蒙古)投资控股有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the PVT method, the growth time is long and the growth conditions are harsh, but only one silicon carbide single crystal can be grown in one growth furnace, and the production efficiency is not high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for simultaneous growth of multiple silicon carbide single crystals
  • Device for simultaneous growth of multiple silicon carbide single crystals
  • Device for simultaneous growth of multiple silicon carbide single crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention.

[0026] refer to Figure 1 to Figure 8 , the present invention is a device for simultaneous growth of multiple silicon carbide single crystals, comprising a graphite crucible 21, an induction heating coil 8 and a driving mechanism 1; the driving mechanism 1 is located above the outside of the graphite crucible 21, and the induction heating The coil 8 is located outside the graphite crucible 21; the graphite crucible 21 includes a main chamber 10 located at the bottom and an auxiliary chamber 17 located at the top, the bottom of the main chamber 10 contains silicon carbide source powder 9, and the auxiliary chamber 17 Comprising a first auxiliary material tank 16 and a second auxiliary material tank 14, the bottom of the first auxiliary material tank 14 holds silicon carbide source powd...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a device for simultaneous growth of a plurality of silicon carbide single crystals. The device comprises a graphite crucible, an induction heating coil and a driving mechanism. The driving mechanism is located above the outside of the graphite crucible, the induction heating coil is located outside the graphite crucible, and the graphite crucible is cylindrical and comprises a main chamber located at the lower part and an auxiliary chamber located at the upper part. The bottom of the main chamber is filled with silicon carbide source powder. The auxiliary chamber comprises a first auxiliary material groove with the bottom filled with the silicon carbide source powder and a second auxiliary material groove with the bottom filled with halide auxiliary materials. Through the special design of the structure of the growth device, the corresponding requirements on the growth environment in the growth process of a plurality of silicon carbide single crystals are met, and a plurality of high-quality silicon carbide single crystals are obtained in the same batch, so that the growth efficiency of the current silicon carbide single crystals is remarkably improved.

Description

technical field [0001] The invention relates to the field of silicon carbide single crystal growth, in particular to a device capable of simultaneously growing multiple silicon carbide single crystals. Background technique [0002] As the concepts of green development and energy saving and emission reduction are deeply rooted in the hearts of the people, people's requirements for the performance indicators of power semiconductor devices are increasing day by day. The third-generation semiconductor materials represented by silicon carbide have been paid more and more attention to their development and promotion because of their high thermal conductivity, high critical breakdown electric field and many other unique advantages. At present, some leading countries and international large enterprises have invested in the research and development and production of the third-generation semiconductor silicon carbide. However, the current high price and low production efficiency have...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/002C30B29/36
Inventor 陈启生许浩
Owner 中科汇通(内蒙古)投资控股有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap