Quantum well avalanche photodiode
An avalanche photoelectric and diode technology, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of avalanche photodiodes without high responsivity and low noise, and achieve improved certainty, reduced noise, and improved performance. The effect of the indicator
Active Publication Date: 2021-08-20
CHANGCHUN UNIV OF SCI & TECH
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[0003] In order to solve the problem of existing avalanche photodiodes that do not have high responsivity and low noise, the invention provides a quantum well avalanche photodiode
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[0013] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0014] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.
[0015] A quantum well avalanche photodiode, the avalanche photodiode is a hole avalanche photodiode, the hole avalanche photodiode includes an n-type semiconductor absorption layer 1, an avalanche layer 2 and a p-type semiconductor carrier collection layer 3, an n-type electrode, a p-type semiconductor type electrodes, such as figure 1 , the n-type semiconducto...
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Abstract
The invention discloses a quantum well avalanche photodiode, which relates to the technical field of avalanche diodes, solves the problem that the existing avalanche photodiode does not have high responsivity and low noise. The hole avalanche diode comprises an n-type semiconductor absorption layer, an avalanche layer, a p-type semiconductor carrier collection layer, an n-type electrode and a p-type electrode which are arranged in sequence, wherein the avalanche layer comprises II-type multiple quantum wells or multiple heterojunctions, and the energy band arrangement of the avalanche layer is II-type arrangement; after the valence band order of the hole is obtained at the well-barrier interface of the II-type multiple quantum wells or the p-type and n-type interface of the multiple heterojunctions, the hole energy of the hole is equal to the ionization threshold energy of the hole, and the hole is subjected to a collision ionization process; the electron energy of electrons after loss of conduction band order at the well-barrier interface of the II-type multiple quantum wells or the p-type and n-type interface of the multiple heterojunctions is smaller than the ionization threshold energy of the electrons, and the electrons do not generate a collision ionization process. The avalanche photodiode realizes the characteristics of high multiplication factor and low noise, and improves the performance index of the existing avalanche photodiode.
Description
technical field [0001] The invention relates to the technical field of avalanche diodes, in particular to a quantum well avalanche photodiode. Background technique [0002] Avalanche photodiode is a typical high-performance photodetector structure. Compared with photoconductive and Schottky junction photodetectors, avalanche diode has the characteristics of high gain and high speed. Its working principle is that under the action of a high built-in electric field, the photogenerated carriers undergo an avalanche multiplication effect, thereby multiplying the photocurrent exponentially. However, when the avalanche of photogenerated carriers occurs, the noise current of the detector also undergoes an avalanche process, which reduces the noise performance of the detector. When designing the detector structure, it is inevitable to consider the performance trade-off between responsivity and noise, and achieving high responsivity and low noise at the same time is the difficulty of...
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Patent Timeline
Login to View More IPC IPC(8): H01L31/107H01L31/0352
CPCH01L31/107H01L31/035236H01L31/035272Y02P70/50
Inventor 王登魁魏志鹏方铉房丹唐吉龙林逢源李科学王新伟马晓辉
Owner CHANGCHUN UNIV OF SCI & TECH