High-FREQUENCY POWER-AMPLIFYING ELEMENT
A technology of power amplification and components, applied in the field of high-frequency power amplification components, can solve the problems of high-frequency signal bipolar transistor current concentration, ineffectiveness, breakdown, etc.
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no. 1 example
[0042] refer to Figure 1 to Figure 5 , the high-frequency power amplifying element of the first embodiment will be described.
[0043] figure 1 is an equivalent circuit diagram of a power amplifying module 50 including the high-frequency power amplifying element 20 of the first embodiment. The power amplifying module 50 includes: a high-frequency power amplifying element 20 composed of a monolithic microwave integrated circuit (MMIC), inductors 51 and 52 connected to the high-frequency power amplifying element 20 and an output matching circuit 53 . The high frequency power amplifying element 20 includes a first amplifying circuit 21 , a second amplifying circuit 22 , an input matching circuit 23 , an interstage matching circuit 24 , a first bias circuit 25 and a second bias circuit 26 . There are cases where the first amplifier circuit 21 and the second amplifier circuit 22 are called an input stage amplifier circuit and an output stage amplifier circuit, respectively.
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no. 2 example
[0126] Next, refer to Figure 7 The high-frequency power amplifying element of the second embodiment will be described. Below, for Figure 1 to Figure 4 The description of the structure common to the high-frequency power amplifying element 20 of the first embodiment shown in the drawings is omitted.
[0127] Figure 7 is the second amplifying circuit 22 ( figure 1 ) is a diagram showing the positional relationship in plan view of each component of the bipolar transistor 41 included in ). In the first embodiment, the shapes of the emitter mesa layer 62 and the emitter electrode 63E in plan view are substantially rectangular. On the other hand, in the second embodiment, the emitter mesa layer 62 and the emitter electrode 63E have a shape in which both ends of a rectangle are thinner than the central portion in plan view.
[0128] Therefore, the interval between the fingers 63B1F of the first base electrode 63B1 and the emitter mesa layer 62 is not constant. In this case, t...
no. 3 example
[0134] Next, refer to Figure 8A as well as Figure 8B The high-frequency power amplifying element of the third embodiment will be described. Below, for Figure 1 to Figure 4 The description of the structure common to the high-frequency power amplifying element 20 of the first embodiment shown in the drawings is omitted.
[0135] Figure 8A is the first amplifying circuit 21 ( figure 1 ) is a diagram showing a planar arrangement of components of one bipolar transistor 31 included in the plurality of bipolar transistors 31 . Figure 8B is the second amplifying circuit 22 ( figure 1 ) is a diagram showing a planar arrangement of components of one bipolar transistor 41 included in the plurality of bipolar transistors 41 .
[0136] In the first embodiment ( figure 2 A. figure 2 In B), the first base electrode 63B1 is connected to the first base lead wiring 64B1, and the second base electrode 63B2 is connected to the second base lead wiring 64B2. In contrast, in the thir...
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Abstract
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