Semiconductor device

Abstract

The invention provides a semiconductor device. The semiconductor device comprises a shallow trench isolation structure; a conductive region; a first gate structure which is located on the shallow trench isolation structure and comprises a first gate, first metal layers and a connecting piece, wherein the first metal layers are located on the two sides of the first gate, the first metal layer on each side of the first gate is cut into two parts in the extending direction of the first gate, the first metal layers are located on the two sides of one end of the first gate, and first metal layers on the two sides of the different ends of the adjacent first grids are connected through connecting pieces; and a second gate structure partially located on the shallow trench isolation structure and partially located on the conductive region, wherein the second gate structure comprises second grids, first metal layers and connecting pieces, the first metal layers are located on the two sides of the second grids, the first metal layers on the two sides of one end of each second grid are connected through the connecting pieces, and the first metal layers on the two sides of the different ends of the adjacent second grids are connected through the connecting pieces.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device. Background technique [0002] In semiconductor technology, the size of devices is getting smaller and smaller. Therefore, when devices are formed on a substrate, multiple devices are often formed at the same time and then divided. Therefore, the first gate and the second gate of the present invention are The above is formed in the same step, and then cut to form two devices, the first gate is one device, and the second gate is the other device. However, if the first gate and the second gate are not cut off, the performance of the two devices will be affected. Therefore, it is necessary to detect whether the first gate and the second gate are cut off. [0003] In the prior art, semiconductor devices such as figure 1 , the first gate 111 is on the shallow trench isolation structure, the first metal layer 112 on both sides of the first gate 111 is co...

AI Technical Summary

Problems solved by technology

However, each first metal layer 112 has two places that will be connected to the connector 113, so at this time, the two connections will be sliced, but the real etching may be at one of the connections, so If one of the two joints is selected for slicing, the other may be cut by mistake, which indirectly affects the performance of the semiconductor device

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