Memristor for realizing shaping and positioning of conductive filament channel

Abstract

The invention belongs to the technical field of microelectronic devices, and discloses a memristor for realizing shaping and positioning of a conductive filament channel. The memristor comprises an upper electrode, a functional layer and a lower electrode, wherein the functional layer is based on the same metal oxide memristive material, the oxygen content is in gradient change, the oxygen content is firstly increased and then decreased in a direction from the lower electrode to the upper electrode, and the minimum value of the oxygen vacancy concentration appears in the middle of the functional layer, so that a fracture position of the conductive filament channel in the memristor can be positioned in the middle of the functional layer. According to the memristor, the detailed structure and composition of the functional layer of the memristor are improved, the obtained memristor can achieve shaping of the morphology of the conductive filament channel and positioning of an on-off position of the conductive filament channel, and compared with an existing memristor structure, the memristor is conductive to achieve the low-power-consumption, high-consistency and multi-resistance-state memristor performance, and can effectively solve the problem of randomness of the size and the forming position of a conductive wire of a memristor in the prior art.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and more specifically relates to a memristor for realizing the shaping and positioning of conductive filament channels, which can realize the shaping and positioning of conductive filament channels through the regulation and control of multi-layer functional layer structure. Background technique [0002] Memristors are composed of upper and lower electrodes and a "sandwich" structure of functional layers. The dielectric functional layer is used as the medium for ion transmission and storage. Different selection of functional layers will introduce different resistance switching mechanisms, and thus have different applications. The ion movement and structural changes of the functional layer are caused by external voltage or current excitation, which in turn causes the resistance of the device to change, and further stores data through resistance differences. [0003] As one of the f...

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Problems solved by technology

[0004] Beijing Keyida Intellectual Property Service Co., Ltd. (a high-consistency memristor and its preparation method, CN110165050A) discloses a high-consistency memristor and its preparation method. A layer of active metal nano-intercalation is inserted between them to regulate the formation position of the metal conductive wire to improve the performance of the device, but this method makes the memristor consistent (the fluctuation range of high resistance is within 10 5 ~10 8 Between), there are some deficiencies in the device cycle characteristics, window value

In 2012, Ryu et al. inserted a Ni interface layer between NiO and Pt top electrodes to control the breakage of the oxygen conductive filament path at the interface, effectively reducing the reset current, but this method also made the consistency of the high and low resistance of the device poor (high and low The resistance fluctuates within a window of 10 times)

[0006] The inventor of the present invention obtained "High-performance memristive device based on metal oxide oxygen concentration gradient and its preparation" (see Chinese patent document CN108807668A), which discloses a memristive device based on metal oxide oxygen concentration gradient. Resistor, the functional layer is a metal oxide, and the oxygen content in the functional layer increases or decreases along the direction from the lower electrode to the upper electrode. Although it can form a tapered conductive channel, the cone top of the conductive channel with high oxygen content has The characteristics of easy on-off can realize high-speed resistive switching under low-voltage operation. However, since the tapered tip of the tapered conductive channel is close to the electrode interface, in order to break the conductive channel, it is necessary to overcome the barrier between the electrode and the functional layer. Moreover, there is poor consistency (high resistance fluctuation range is large), and the window range is small (about 100)

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