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Manufacturing method for epitaxial growth of compound of laser device chip

A technology of epitaxial growth and manufacturing method, applied in the field of chip manufacturing, can solve the problems of uneven heat conduction of substrate, uneven heat conduction, substrate etching and the like

Inactive Publication Date: 2021-09-10
深圳市中科光芯半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies of the prior art, the present invention provides a manufacturing method for compound epitaxial growth of laser chips, which has the principle of automatic balance of temperature during the first epitaxial growth to prevent uneven heat conduction from causing quality problems, and automatically and timely when preparing gratings. The advantage of recovering the etching solution to improve the quality of the chip solves the problem of uneven heat conduction of the substrate when the grating is prepared for the traditional laser chip, and the etching solution of the grating will cause a certain degree of etching on the substrate

Method used

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  • Manufacturing method for epitaxial growth of compound of laser device chip
  • Manufacturing method for epitaxial growth of compound of laser device chip
  • Manufacturing method for epitaxial growth of compound of laser device chip

Examples

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Embodiment 1

[0034] see Figure 1-5 , a method for manufacturing a compound epitaxial growth of a laser chip, comprising the following steps:

[0035] S1. Put the raw material on the substrate holder 1 during use, and increase the temperature of the raw material by raising the external temperature during the first epitaxial growth;

[0036] S2. The raised temperature is conducted to the heat conduction ball 42 through the judgment rod 41, and then dissipated into the transmission chamber 43 through the heat conduction ball 42. At this time, the temperature in the transmission chamber 43 rises and the pressure increases, and the guide plug 44 and the transmission chamber The inner wall of cavity 43 fits tightly, so the guide plug 44 will receive a downward thrust at this time, and this thrust acts on the return spring 46 through the guide plug 44, and finally stretches the return spring 46 to make it deformed Push the pressure rod 45 to move, and the pressure rod 45 will simultaneously pul...

Embodiment 2

[0049] see figure 1 , figure 2 and Figure 4 , a method for manufacturing a compound epitaxial growth of a laser chip, comprising the following steps:

[0050] S1. Put the raw material on the substrate holder 1 during use, and increase the temperature of the raw material by raising the external temperature during the first epitaxial growth;

[0051] S2. The raised temperature is conducted to the heat conduction ball 42 through the judgment rod 41, and then dissipated into the transmission chamber 43 through the heat conduction ball 42. At this time, the temperature in the transmission chamber 43 rises and the pressure increases, and the guide plug 44 and the transmission chamber The inner wall of cavity 43 fits tightly, so the guide plug 44 will receive a downward thrust at this time, and this thrust acts on the return spring 46 through the guide plug 44, and finally stretches the return spring 46 to make it deformed Push the pressure rod 45 to move, and the pressure rod 4...

Embodiment 3

[0063] see Figure 1-5 , a method for manufacturing a compound epitaxial growth of a laser chip, comprising the following steps:

[0064] S1. Put the raw material on the substrate holder 1 during use, and increase the temperature of the raw material by raising the external temperature during the first epitaxial growth;

[0065] S2. The raised temperature is conducted to the heat conduction ball 42 through the judgment rod 41, and then dissipated into the transmission chamber 43 through the heat conduction ball 42. At this time, the temperature in the transmission chamber 43 rises and the pressure increases, and the guide plug 44 and the transmission chamber The inner wall of cavity 43 fits tightly, so the guide plug 44 will receive a downward thrust at this time, and this thrust acts on the return spring 46 through the guide plug 44, and finally stretches the return spring 46 to make it deformed Push the pressure rod 45 to move, and the pressure rod 45 will simultaneously pul...

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PUM

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Abstract

The invention relates to the technical field of chip manufacturing, and discloses a manufacturing method for epitaxial growth of a compound of a laser device chip. The equipment comprises a temperature adjusting mechanism and a recovering mechanism, wherein the temperature adjusting mechanism comprises a connecting block, a limiting sliding rod is movably connected in the connecting block, a buffer spring is movably connected to the side, away from the limiting sliding rod, of the connecting block, an adjusting shifting sheet is fixedly connected to the left side of the connecting block, a resistor disc is movably connected to the end, away from the connecting block, of the adjusting shifting sheet, a fastening frame is fixedly connected to the exterior of the resistor disc, temperature is transmitted into a transmission cavity through a judgment rod so as to pull the connecting block to slide on the limiting sliding rod, and in the sliding process of the connecting block, the connecting block can drive the adjusting shifting sheet to slide on the resistor disc at the same time, so that the voltage applied to a heating wire is changed so as to achieve the effect of automatically balancing the principle temperature during first epitaxial growth to prevent the quality problem caused by non-uniform heat conduction.

Description

technical field [0001] The invention relates to the technical field of chip manufacturing, in particular to a method for manufacturing laser chip compound epitaxial growth. Background technique [0002] A laser is a device capable of emitting laser light. Its light quality is pure and its spectrum is stable and can be used in many aspects. Taking DFB lasers as an example, it has high-speed, narrow linewidth and dynamic single longitudinal mode working characteristics, and its The mode jump of ordinary FP lasers can be suppressed in a wider operating temperature and operating current range, so DFB lasers have been widely used in the field of optical communications. [0003] DFB laser chips for optical communication generally use InP as the growth substrate, and two epitaxial growths are required during manufacture. The two epitaxial growths are respectively used to prepare the grating and form the contact layer. The impact of growth is serious, and the yield rate of the curr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/00
CPCH01S5/00H01S2304/02H01S2304/00
Inventor 郑君雄郑世进崔雨舟王青
Owner 深圳市中科光芯半导体科技有限公司