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Crystal growth furnace

A crystal growth furnace and detection line technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as single crystal furnace damage

Active Publication Date: 2021-09-17
连城凯克斯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the single crystal furnace fails to monitor the silicon leakage in real time. Generally, the silicon leakage is inferred based on the ignition of the heater after the silicon leakage. Sometimes the furnace bottom bellows burns through the silicon leakage before it is discovered, which will cause great damage to the single crystal furnace.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] use figure 1 In the crystal growth furnace, a crucible 3 carrying solution is installed in the crystal growth furnace, and a bottom protection plate (not marked in the figure) is arranged under the crucible. The silicon leakage detection device 1 is arranged on the bottom protection pressure plate, and the detection line follows image 3 The non-uniform circuit layout shown (without cladding material layer), the detection line should avoid the thermal field components during the layout process (2 electrodes of the main heater, 2 electrodes of the side heater, 2 exhaust hole, 1 supporting rod), the distance d between the adjacent line segments of the detection line is 5-15mm (d value is not fixed), the detection unit 13 is connected with the incoming line end 121 and the outgoing line end 122 of the detection line 12, and the detection line The resistance value, and the judgment of silicon leakage is carried out through the change of the resistance value. The detection u...

Embodiment 2

[0054] The difference with Embodiment 1 is that the silicon leakage detection device includes a cladding material layer 11, and the cladding material layer 11 has a thermal field member (two electrodes of the main heater, side 2 electrodes of the heater, 2 exhaust holes, 7 through holes 110 of 1 supporting rod), detection line 12 is arranged in the middle of cladding material layer 11, and cladding material layer is quartz fiber cloth, and its aperture is 6 μm, the thickness of a single layer is 0.03mm, the upper layer of the coating material layer is 10 layers, the lower layer of the central area of ​​the coating material layer is 100 layers, and the lower layer at the edge area of ​​the coating material layer is 0-20mm. It is 150 floors.

Embodiment 3

[0056] The difference from Example 2 is that the cladding material layer is quartz fiber cloth with a pore size of 2 μm and a single layer thickness of 0.05 mm. The upper layer of the cladding material layer is 8 layers, and the central area of ​​the cladding material layer is The lower layer is 50 layers, and the lower layer at the 20mm edge region of the cladding material layer is set to 70 layers.

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Abstract

The invention aims to provide a crystal growth furnace. The crystal growth furnace comprises a crucible which is used for bearing silicon liquid; a silicon leakage detection device, which is arranged below the crucible and comprises a detection line, wherein the detection line is a conductive metal wire and is arranged in a projection area right below the crucible and is arranged in the projection area of the crucible; and a detection unit which is connected with the wire inlet end and the wire outlet end of the detection wire and is used for detecting the electrical property parameter value of the detection wire. A silicon leakage detection device is arranged in a projection area under a crucible; when the silicon liquid leaks from the crucible, the silicon liquid can directly drop on the detection line; and at the moment, the detection unit senses the change of the electrical property parameter of the detection line and feeds back the change to the crystal growth furnace in time, so that the silicon leakage is monitored in real time, and the danger is avoided.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a crystal growth furnace. Background technique [0002] The main growth method of single crystal silicon wafer is the Czochralski method. During the growth process of single crystal crystal, the temperature of molten silicon will be as high as 1400-1500°C. During the process of silicon material from melting to equal diameter finishing, leakage may occur. There are many reasons for silicon accidents, which may be crucible crystallization, bulging or improper human operation. [0003] At present, the single crystal furnace fails to monitor the silicon leakage in real time. Generally, the silicon leakage is inferred based on the ignition of the heater after the silicon leakage. Sometimes the furnace bottom bellows burns through the silicon leakage before it is discovered, which will cause great damage to the single crystal furnace. Contents of the invention [0004] In order to solv...

Claims

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Application Information

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IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/20C30B29/06
Inventor 黎志欣逯占文胡动力李占贤
Owner 连城凯克斯科技有限公司
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