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Single-chip DAF adhesive tape crystal bonding method

A single-chip and adhesive tape technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of uneven adhesive layer and small application range, and achieve the effect of preventing glue overturning

Pending Publication Date: 2021-09-17
XIAN MICROELECTRONICS TECH INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the disadvantages of glue overflow, glue turning, uneven glue layer and small application range in the above-mentioned prior art, the purpose of the present invention is to provide a single-chip DAF tape bonding method

Method used

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  • Single-chip DAF adhesive tape crystal bonding method
  • Single-chip DAF adhesive tape crystal bonding method
  • Single-chip DAF adhesive tape crystal bonding method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A kind of single-chip DAF adhesive tape bonding crystal method, comprises the steps: as figure 2 as shown,

[0033] Step 1): Attach the UV photosensitive DAF tape 1 to the bandage ring, cut the DAF tape adhesive layer 2 on the wafer dicing machine into 0.05mm×0.05 mm Small squares of mm size.

[0034] Step 2): Use the pick-up and place device to pick up the front side of a single chip 3, and stick the back side down on the cut DAF tape, and heat and press at a temperature of 60°C and a pressure of 0.1Mpa for 10 seconds. At this time, the bonding of the DAF tape Enhanced layer to chip adhesion.

[0035] Step 3): UV light is irradiated from the back of the tape where the chip is attached, and the intensity of UV light irradiation is > 120mW / cm 2 , so that the adhesive force between the DAF tape adhesive layer and the tape substrate is reduced, and then the chip is removed according to the conventional coring method for subsequent die-bonding operations. At this time, ...

Embodiment 2

[0037] A kind of single-chip DAF adhesive tape bonding crystal method, such as image 3 shown, including the following steps:

[0038] Step 1): Attach the UV photosensitive DAF tape 1 to the bandage ring, use the suction and placement device to absorb the front of a single chip, attach the back to the DAF tape, and heat it at a temperature of 90°C and a pressure of 0.1Mpa The pressure is applied for 3 seconds, and at this time, the adhesive force between the adhesive layer 2 of the DAF tape and the chip 3 is enhanced.

[0039] Step 2): Cut the DAF adhesive layer on a wafer dicing machine to a size 10 μm larger than the chip size.

[0040] Step 3): UV light is irradiated from the back of the tape where the chip is attached, and the intensity of UV light irradiation is > 120mW / cm 2 , so that the adhesive force between the DAF tape adhesive layer and the tape substrate is reduced, and then the chip is removed according to the conventional coring method for subsequent die-bondin...

Embodiment 3

[0042] A kind of single-chip DAF adhesive tape bonding crystal method, such as figure 1 shown, including the following steps:

[0043] Step 1): Attach the UV photosensitive DAF tape 1 to the bandage ring, cut the DAF tape adhesive layer 2 on the wafer dicing machine into 0.05mm×0.05 mm Small squares of mm size.

[0044] Step 2): Use the pick-up and place device to pick up the front side of the single chip 3, stick the back side down on the cut DAF tape, and heat and press at a temperature of 70°C and a pressure of 0.1Mpa for 8 seconds. At this time, the bonding of the DAF tape Enhanced layer to chip adhesion.

[0045] Step 3): UV light is irradiated from the back of the tape where the chip is attached, and the intensity of UV light irradiation is > 120mW / cm 2 , so that the adhesive force between the DAF tape adhesive layer and the tape substrate is reduced, and then the chip is removed according to the conventional coring method for subsequent die-bonding operations. At thi...

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Abstract

The invention discloses a single-chip DAF adhesive tape crystal bonding method, which belongs to the technical field of semiconductor packaging. A single chip to be subjected to crystal bonding is attached to a pretreated DAF adhesive tape, so that the single chip is attached to the DAF adhesive tape, and then the chip is tightly bonded with a carrier through a traditional crystal bonding process. Through the implementation of the invention, the problem that a DAF adhesive tape cannot be attached to the single chip in advance for wafer bonding is effectively solved, so that the problems of glue overflowing, glue overturning, uneven glue layers, cavities and the like which are easy to occur in a wafer bonding process of the single chip are solved. The method disclosed by the invention is a new idea and a new method for bonding the single chip by using the DAF adhesive tape. When the method is used for crystal bonding of the single chip, the voidage of the bottom can be controlled within 5%, the uniformity of an adhesive layer can be controlled within 10%, the adhesive overflow range does not exceed 20 microns, and the occurrence of adhesive overturning is avoided.

Description

technical field [0001] The invention belongs to the technical field of semiconductor packaging and relates to a single-chip DAF tape bonding method. Background technique [0002] The current typical packaging process of semiconductor devices includes wafer thinning, dicing, die bonding, wire bonding, and encapsulation. There are two main ways in the traditional chip bonding process, one is to pre-spray liquid adhesive on the chip carrier, then place the chip on it, and finally cure the adhesive to fix the chip; the other is to use a The dicing tape (DAF tape) of the adhesive layer is attached to the back of the wafer after the wafer is thinned so that the detachable semi-solid adhesive layer on the DAF tape is bonded to the chip, and the single chip after dicing With an adhesive layer, the chip can be directly pasted on the chip carrier, and finally the chip can be fixed by curing the adhesive layer. [0003] Among them, the method 1 has high requirements on the control of...

Claims

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Application Information

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IPC IPC(8): H01L21/67
CPCH01L21/67132
Inventor 梅志鹏岳永豪张宁
Owner XIAN MICROELECTRONICS TECH INST
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