Broadband high-power microwave adaptive protection device

A high-power microwave and protective device technology, applied in the direction of antennas, slot antennas, electrical components, etc., can solve the problems of increasing the protection bandwidth and inability to passband protection, and achieve low insertion loss, broaden the shielding effectiveness, and improve the protection effect.

Active Publication Date: 2021-09-17

SHANXI UNIV

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Problems solved by technology

This scheme utilizes the broadband protection characteristics of the frequency selective surface to effectively increase the protection bandwidth. At the same time, by introducing a ...

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Abstract

The invention belongs to the field of space strong electromagnetic field protection, and particularly relates to a broadband high-power microwave adaptive protection device. In order to solve the problems that an existing protection device is low in working frequency band and narrow in bandwidth, the device comprises a switch type metasurface, two layers of band-pass frequency selection surfaces and three layers of dielectric plates. The switch type metasurface is printed on the upper surface of the upper-layer dielectric plate; the two layers of band-pass frequency selection surfaces are printed on the upper surfaces of the middle-layer dielectric plate and the lower-layer dielectric plate, and the two layers of band-pass frequency selection surfaces are the same in structure. An air layer is arranged among the three layers of dielectric plates; each unit of the switch type metasurface is composed of two square metal rings, and the metal ring on the outer side is connected with the adjacent unit to form a grid structure. Four gaps are etched at the midpoints of four edges of the inner-layer square ring, and PIN diodes are bridged on the four gaps; each unit structure of the band-pass frequency selection surface is formed by etching four rhombic gaps on a metal sheet.

Application Domain

Magnetic/electric field screeningSubstantially flat resonant elements +1

Technology Topic

PhysicsFrequency band +9

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Examples

Experimental program(1)

Example Embodiment

[0020] Example 1

[0021] like Figure 1 ~ 3 As shown, the present invention has a wide frequency band high power microwave adaptive protective device including a switched type super surface 1 provided from top to bottom, an upper dielectric plate 2, a first band pass frequency selection surface 3, a medium-layer dielectric plate 4, The second band pass frequency selection surface 5, the lower dielectric plate 6;

[0022] The switch type super surface 1 is printed on the upper surface of the upper dielectric plate 2, which is printed on the upper surface of the middle dielectric plate 4, and the second band pass frequency selection surface 5 printed The upper surface of the lower dielectric plate 6 is made in the upper surface of the upper dielectric plate 2, the upper dielectric plate 4, and the lower dielectric plate 6 are air layers, the centerline of the switch type super surface 1, the centerline of the upper dielectric plate 2, The central line of the first band pass frequency selection surface 3, the centerline of the middle medium plate 4, the centerline of the second band pass frequency selection surface 5, the centerline of the lower dielectric plate 6.

[0023] The switch type super surface 1 is composed of M × M unit, each unit is a first square metal patch 7, or etched outside the outer layer ring 8 and within the first square metal patch 7. Layer ring 9, a square slit 10 having a width of D is etched at each side of the inner layer ring 9, and a PIN diode 11 is connected to each of the square slits 10.

[0024] The first band pass frequency selection surface 3 is composed of a M × M unit, each unit is a second square metal patch 12, and four sides are uniformly etched in the center axial direction of the second square metal patch 12. A rhombic slit 13 having a length of S, a minimum inner angle is θ, the second band pass frequency selection surface 3 is the same as the structure and size of the first band pass frequency selection surface 5.

[0025] Wherein, m = 20, D = 0.7 mm, S = 6.7 mm, θ = 60 °.

[0026] The transmission characteristic of the device is controlled by the transmission signal; when the low power signal is incident, since the induced voltage is smaller than the threshold voltage, the diode cutoff, the passband, the switch type hyperopath, and the band pass band contains f. 1 , The two are f 1 The signal is expressed as transmissive, and the operating frequency is f. 1 The electromagnetic wave can be transmitted; when the HPM is incident, since the induced voltage is larger than the on-voltage, the diode is turned on, the switching tape of the switch type super surface is moved to F. 1 At this time, the frequency is f. 1 HPM is reflected by the switch type super surface, F 1 The band signal other than the band passage is reflected by the frequency selection surface, and the guard is realized to broadband protection for high power signals.

[0027] like Figure 4 As shown, the curve represents the transmission absorption curve S under low power signal incident conditions. 21. pass through Figure 4 It can be seen that the active frequency selection surface resonates at 4.2 GHz and the insertion loss is 1.46dB. Work bandwidth (| s 21 | <2DB) is 4.02 to 4.44 GHz.

[0028] like Figure 5 As shown, the curve indicates the transmission coefficient S of the protective device under high power signal incident. 21. pass through Figure 5 It can be seen that when the high power signal is incident, the induced voltage is greater than the threshold voltage, the diode is turned on, and the shielding effect of the guard device is always greater than 20 dB within the wideband range of 0 to 8.85 GHz.

[0029] like Image 6 As shown, the curve I represents an incident waveform having a modulated sine wave excitation protective surface of the electric field intensity of 10 V / m, and the curve II represents the waveform after transmission. pass through Image 6 It can be seen that when the incident wave power is small, the protective surface is operated in transmission mode, and the waveform of the transmission signal is substantially the same as the incident waveform, and the insertion loss is 2 dB.

[0030] like Figure 7 As shown, the curve I represents an incident waveform when the electric field intensity is 2000 V / m, and the curve II represents the transmission waveform. pass through Figure 7 It can be seen that when the incident wave power is very large, the protective surface works in the protective mode. At this time, the power of the incident wave is well suppressed, and the shielding efficiency can reach 20 dB.

[0031] Figure 8 The shielding performance of the present invention is a schematic diagram of a strong variation of an incident wave field. Depend on Figure 8 It can be seen that the shielding effect SE changes in the range of 2 to 20 dB in the range of 2 to 20 dB. When the electric field intensity changes in the range of 0 to 70V / m, the protective device is in a stable transmission state, the insertion loss is 2dB, and the diode on the protective device starts to turn on, and the shielding performance SE is turned on with the field strength. The diode gradually turned on to increase, and when strong increase to 1100V / m, the diode is fully turned on, the protective device is in a stable protection, and the shielding effect SE is stable in 20 dB.

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Broadband high-power microwave adaptive protection device

AI-Extracted Technical Summary

Problems solved by technology

Abstract

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Examples

Example Embodiment

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Description & Claims & Application Information

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